DiodesZetex N-Channel Enhancement MOSFET 240mA 250V Surface Mount 3-Pin SOT-89 ZVN4525ZTA

DiodesZetex ZVN4525ZTA is an N-Channel enhancement mode MOSFET transistor designed for use in electronic circuits requiring switching and amplification functions.

This surface mount device comes in a compact 3-pin SOT-89 package optimized for space-saving PCB layouts. With a maximum continuous drain current of 240mA and a high maximum drain-source voltage rating of 250V, it is suitable for a range of low power industrial and consumer electronics applications.

Key technical parameters include a low maximum drain-source resistance of 9.5 ohms, enabling efficient current flow and reduced power loss. Its gate charge of 2.6nC ensures rapid switching capabilities, important in pulse or digital control circuits.

The device supports operation between -55°C and +150°C, allowing its use in industrial environments with thermal variations. It dissipates a maximum power of 1.2W, making it ideal for moderate power level switching roles in circuits.

The typical forward voltage drop of 0.97V ensures energy efficiency in conduction. Its compact dimensions (4.6mm x 2.6mm x 1.6mm) make it suitable for integration in dense assemblies and compact electronic devices.

This transistor finds applications across industrial automation, electronic instrumentation, power management, and consumer electronic devices. It is surface mounted on printed circuit boards offering reliable performance under demanding conditions.

This MOSFET is an N-Channel enhancement type designed for efficient switching. The device is housed in a compact 3-pin SOT-89 package suitable for surface mounting. It supports a maximum continuous drain current of 240mA and a maximum drain-source voltage of 250V.

The maximum drain-source resistance (Rds) is 9.5 ohms, ensuring good conduction characteristics. The MOSFET operates reliably between -55°C minimum to 150°C maximum temperatures. With a gate charge (Qg) of 2.6nC, it enables fast switching performance.

Maximum power dissipation for the device is 1.2W, suitable for low to moderate power applications. The device has a typical forward voltage drop of 0.97V. The physical dimensions are 4.6mm length, 2.6mm width, and 1.6mm height.

This transistor meets all requirements for discrete semiconductor devices without automotive certification. Explore more products in the MOSFET category and other semiconductor offerings at EnvMart.