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DiodesZetex P-Channel Enhancement Mode MOSFET 260 mA 250 V 4-Pin SOT-223 ZVP4525GTA

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DiodesZetex P-Channel Enhancement Mode MOSFET 260 mA 250 V 4-Pin SOT-223 ZVP4525GTA

Name: DiodesZetex P-Channel Enhancement Mode MOSFET 260 mA 250 V 4-Pin SOT-223 ZVP4525GTA
Brand: DiodesZetex
SKU: 410613
Price: 0.54 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.7mm
Length	6.7mm
Model	ZVP4525GTA
Width	3.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-223
Minimum Operating Temperature	-55°C
Pin Count	4
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	260mA
Maximum Drain Source Voltage Vds	250V
Maximum Drain Source Resistance Rds	18Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	2W
Typical Gate Charge Qg @ Vgs	2.45nC
Maximum Gate Source Voltage Vgs	-40, +40V
Forward Voltage Vf	0.97V

Key Features

This MOSFET provides a maximum continuous drain current of 260 mA.
It supports a maximum drain-source voltage of 250 V.
The typical gate charge is 2.45 nC at Vgs.
Maximum power dissipation is rated at 2 Watts.
It operates reliably within a temperature range of -55°C to 150°C.
The MOSFET has a maximum drain-source resistance of 18 Ω.
The package is compact with dimensions 6.7 mm length, 3.7 mm width, and 1.7 mm height.
It complies with automotive standard AEC-Q101.

Product Description

DiodesZetex ZVP4525GTA is a high-quality P-Channel enhancement mode MOSFET designed for semiconductor applications requiring compact, efficient switching and amplification capabilities. This MOSFET features a maximum continuous drain current of 260 mA and a maximum drain-source voltage of 250 V, making it suitable for a variety of low-power electronic circuits.

Packaged in a surface mount 4-pin SOT-223 package, the ZVP4525GTA is ideal for PCB applications that demand space-saving components without compromising performance. Its typical gate charge of 2.45 nC enables fast switching speeds while maintaining efficient gate control. The device supports maximum power dissipation of 2 Watts, ensuring reliable operation over prolonged usage.

Operating temperature extends from -55°C up to 150°C, making this MOSFET suitable for automotive and industrial environments requiring wide temperature tolerance. Additionally, the device exhibits a maximum drain-source resistance of 18 Ω, which contributes to lesser conduction losses in operational circuits.

The ZVP4525GTA complies with automotive standard AEC-Q101, ensuring high reliability and quality assurance for automotive applications. Its compact package dimensions of 6.7 mm length, 3.7 mm width, and 1.7 mm height support design flexibility for electronic engineers.

This MOSFET provides a maximum continuous drain current of 260 mA. Maximum drain-source voltage rating is 250 V. Gate charge at Vgs is 2.45 nC for efficient switching. Maximum power dissipation is rated at 2 Watts. Operates over wide temperature range: -55°C to 150°C.

Maximum drain-source resistance is 18 Ω, reducing conduction loss. Compact 4-Pin SOT-223 surface mount package for PCB designs. Conforms to automotive reliability standard AEC-Q101.

This P-Channel MOSFET is ideal for industrial electronics, automotive circuits, power management, and semiconductor device manufacturing. Engineers can trust its robustness and electrical characteristics for precision applications.

Discover more reliable semiconductor solutions in the MOSFET category on EnvMart.