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DiodesZetex DMP Type P-Channel MOSFET 11A 20V Enhancement Mode 8-Pin PowerDI3333 DMP2008UFG-7

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DiodesZetex DMP Type P-Channel MOSFET 11A 20V Enhancement Mode 8-Pin PowerDI3333 DMP2008UFG-7

Name: DiodesZetex DMP Type P-Channel MOSFET 11A 20V Enhancement Mode 8-Pin PowerDI3333 DMP2008UFG-7
Brand: DiodesZetex
SKU: 410567
Price: 0.45 USD
Availability: InStock

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Category Power MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	0.85mm
Length	3.35mm
Model	DMP2008UFG-7
Width	3.35mm
Mount Type	Surface
Series	DMP
Maximum Operating Temperature	150°C
Package Type	PowerDI3333
Minimum Operating Temperature	-55°C
Pin Count	8
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	11A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	17mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	41W
Typical Gate Charge Qg @ Vgs	72nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	-0.7V

Key Features

Type P channel enhancement mode MOSFET ideal for switching applications.
Maximum continuous drain current of 11 amperes for high-power handling.
Maximum drain-source voltage rating of 20 volts.
Low drain-source resistance of 17 milliohms for efficient conduction.
Maximum power dissipation of 41 watts ensures robust thermal performance.
Wide operating temperature range from -55°C to 150°C.
Typical gate charge of 72 nanocoulombs at specified gate voltage.
Max gate-source voltage rating of -8 to +8 volts for device protection.

Product Description

DiodesZetex DMP2008UFG-7 is a high-performance P-Channel MOSFET designed for industrial and automotive electronic applications. Featuring an 8-pin PowerDI3333 package, this enhancement mode MOSFET supports a maximum continuous drain current of 11A and a drain-source voltage up to 20V, making it suitable for power switching and control circuits.

The device exhibits a low maximum drain-source resistance of 17mΩ which contributes to minimized conduction losses and efficient operation. It can dissipate up to 41 watts of power, providing reliable thermal capacity for demanding environments. Its operating temperature range from -55°C to 150°C ensures stable performance across diverse industrial conditions.

With a typical gate charge of 72nC at specified gate voltages, the MOSFET offers fast switching capabilities essential for high-frequency applications. The maximum gate-source voltage rating of -8V to +8V protects the device from damage due to overvoltage, enhancing device longevity.

The compact physical dimensions (3.35mm length and width, 0.85mm height) allow easy integration into densely packed circuit boards, especially in automotive electronics applications compliant with AEC-Q101 standards.

This P-Channel MOSFET is well-suited for use in automotive systems, industrial controls, power management modules, and other semiconductor-based technologies requiring robust performance and reliability.

Type P channel enhancement MOSFET for efficient switching. Maximum continuous drain current of 11 amperes. Drain-source voltage rating of 20 volts. Low on-resistance reducing power loss. Maximum power dissipation of 41 watts ensures durability.

Wide temperature range from -55°C to +150°C for varied environments. Typical gate charge of 72 nanocoulombs for fast switching. Gate-source voltage max rating of -8V to +8V protects device. Compact 8-pin PowerDI3333 package dimensions.

Automotive standard AEC-Q101 certification. Explore more Power MOSFET products by DiodesZetex in the Electronics & Electricals category at EnvMart for your industrial and automotive electronics projects.