$0.63
$0.61
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay P-Channel MOSFET, 7.2 A, 30 V Enhancement Mode, 8-Pin SOIC Package SI4431CDY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4431CDY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4431CDY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 49mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.2W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.71V |
| P-Channel MOSFET Transistor, 4.1 A, 30 V, 8-Pin SOIC Vishay SI9435BDY-T1-E3Brand | Vishay |
Key Features
- Designed with a low on-resistance of 49 mΩ to optimize power efficiency.
- Equipped with an 8-pin SOIC package suitable for surface mounting.
- Maximum power dissipation rating of 4.2 W ensures reliable operation under load.
- Operates reliably within a temperature range of -55°C to 150°C.
- Typical gate charge is 25 nC at Vgs, facilitating efficient switching.
- Maximum gate-source voltage tolerance of -20 V to +20 V allows robust gate control.
- Forward voltage of -0.71 V supports efficient conduction.
- Compact footprint with dimensions height 1.55 mm, length 5 mm, and width 4 mm for space-constrained designs.
Product Description
Vishay SI4431CDY-T1-GE3 is a P-Channel MOSFET designed for efficient switching and power management in electronic circuits. It supports a maximum continuous drain current of 7.2 A and withstands voltages up to 30 V, making it suitable for a variety of power semiconductor applications.
The device comes in an 8-pin SOIC surface mount package, optimized for compact PCBs and automated assembly lines. Its enhancement mode channel ensures controlled operation and reliability.
Featuring a low on-resistance of 49 mΩ, this MOSFET minimizes conduction losses, improving overall system efficiency. Typical gate charge of 25 nC facilitates fast switching speeds, while the maximum gate-source voltage tolerance of -20 V to +20 V protects the device under varying operational conditions.
Built to operate in extreme temperature environments from -55°C up to 150°C, this transistor is ideal for industrial, automotive, and power electronics applications. Its power dissipation rating of 4.2 W ensures reliable thermal management during continuous use.
The physical dimensions (1.55 mm height, 5 mm length, and 4 mm width) make it suitable for modern dense PCB layouts. Vishay's manufacturing ensures consistent quality with the product originating from China.
Low on-resistance of 49 mΩ supports efficient current conduction. Surface mount 8-pin SOIC package simplifies PCB assembly. High power dissipation rating of 4.2 W for robust thermal performance. Wide operating temperature range from -55°C to 150°C enables versatile use.
Robust gate voltage tolerances (-20 V to +20 V) protect gate integrity. Typical gate charge enables fast switching and power efficiency. Compact dimensions for space-saving electronic designs. Manufactured in China with high quality standards.
This MOSFET is well-suited for industrial automation, automotive electronics, power supplies, and other semiconductor-driven hardware requiring reliable high-current switching and robust thermal performance. Explore more discrete semiconductor and MOSFET options in EnvMart's Electronics & Electricals category for your design needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 7.2 A.
It can withstand a maximum drain-source voltage of 30 V.
The on-resistance of this MOSFET is 49 mΩ, which helps optimize power efficiency.
The typical gate charge is 25 nC at Vgs, facilitating efficient switching.
The maximum power dissipation rating is 4.2 W, ensuring reliable operation under load.
This MOSFET operates reliably within a temperature range of -55°C to 150°C.
It comes in an 8-pin SOIC package, suitable for surface mounting.
The dimensions are 1.55 mm in height, 5 mm in length, and 4 mm in width.
The maximum gate-source voltage tolerance is -20 V to +20 V, allowing robust gate control.
This MOSFET is suitable for industrial automation, automotive electronics, and power supplies.
The forward voltage is -0.71 V, which supports efficient conduction.
It uses an enhancement mode P-channel type channel for controlled operation.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$151.42
$146.88
-3%
New
$4.03
$3.91
-3%
New
$0.63
$0.61
-3%
New
$0.63
$0.61
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent