Toshiba P-Channel MOSFET 10 A 30 V Enhancement Mode 8-Pin SOP TPC8125

The Toshiba TPC8125 is a high-performance P-Channel MOSFET designed for a variety of electronic applications requiring efficient power switching. It operates with a continuous drain current of 10 A and can handle drain-source voltages up to 30 V. With its enhancement mode channel, it provides reliable switching performance ideal for power management, power supply circuits, and amplification in industrial and consumer electronics.

This device comes packaged in a compact 8-pin SOP surface mount package that enables easy integration into modern printed circuit boards where space is limited. The low on-resistance of 17 milliohms minimizes conduction losses, improving efficiency and reducing thermal load. It supports a maximum power dissipation rating of 1.9 W and operates effectively within a temperature range up to 150°C.

Additional electrical parameters include a typical gate charge of 64 nC at Vgs, enabling swift gate response and minimizing switching times. The maximum gate-source voltage rating spans -25 V to +20 V, allowing for flexible gate drive voltages in various circuit configurations. Physical dimensions of 4.9 mm length, 3.9 mm width, and 1.52 mm height further accommodate compact electronic designs.

The TPC8125 is suitable for industrial, laboratory, and commercial applications where robust and efficient power control is required. It is frequently used in power management modules, DC-DC converters, motor control, and automotive electronics.

Maximum continuous drain current of 10 amperes. Drain-source voltage rating of 30 volts. Enhancement mode channel for improved switching performance. Low drain-source resistance of 17 milliohms enhances efficiency. Maximum power dissipation of 1.9 watts ensures thermal reliability.

Compact SOP 8-pin surface mount package suitable for modern circuit designs. Operating temperature rating up to 150°C allows for industrial applications. Typical gate charge of 64 nC at Vgs supports fast switching capabilities.

Maximum gate-source voltage range from -25 V to +20 V for robust gate control. Dimensions 4.9 mm length, 3.9 mm width, 1.52 mm height for space-constrained designs. EnvMart offers this Toshiba TPC8125 MOSFET for integration into sophisticated power electronics projects. Browse other semiconductor components to find complementary products.