onsemi N-Channel MOSFET 240 mA 20 V Enhancement Surface Mount 3-Pin SC-75 NTA4001NT1G

onsemi NTA4001NT1G N-Channel MOSFET is a low voltage discrete semiconductor device designed for efficient switching and amplification in electronic circuits. With a maximum continuous drain current of 240 mA and a drain-source voltage rating of 20 V, it is ideal for compact power management and signal control applications. The device features an enhancement mode channel ensuring the transistor remains off when no gate voltage is applied, contributing to energy efficiency.

Packaged in a 3-pin SC-75 surface mount format, the MOSFET is compatible with automated PCB assembly lines and supports high-density layouts. It has a rated maximum power dissipation of 300 mW, allowing it to handle moderate power loads while maintaining safe operating temperatures. The device operates reliably across a broad temperature range from -55°C to 150°C, making it suitable for industries such as automotive, industrial control, consumer electronics, and telecommunications.

This MOSFET meets the AEC-Q101 automotive standard, assuring enhanced performance and durability under automotive environmental stress conditions. Its low maximum drain-source resistance of 3.5 Ω improves conduction efficiency and reduces power losses, which is critical in battery-powered and energy-conscious applications.

The compact dimensions (1.65 mm length, 0.9 mm width, 0.8 mm height) allow for miniaturized circuit designs while maintaining performance. Gate-source voltage specifications of ±10 V and a typical forward voltage of 800 mV reflect its robust switching capabilities.

Maximum continuous drain current of 240 mA ensures efficient current handling. Maximum drain-source voltage rating of 20 V suits low voltage applications. Surface mount package SC-75 with 3 pins supports compact PCB designs.

Enhancement channel mode for normally off operation. Maximum power dissipation rated at 300 mW for thermal stability. Wide operating temperature range from -55°C to 150°C allows industrial usage. Maximum drain-source resistance of 3.5 Ω minimizes on-state losses.

Supports automotive standard AEC-Q101 for reliability in automotive applications. Compact physical dimensions: length 1.65 mm, width 900 µm, height 800 µm. Maximum gate-source voltage ±10 V and forward voltage of 800 mV.

This MOSFET is recommended for applications in industrial electronics, automotive circuits, power management modules, and communication devices requiring reliable switching elements. Explore additional MOSFET and discrete semiconductor products in the Electronics & Electricals category at EnvMart for comprehensive sourcing solutions.