Nexperia BC856BT is a small signal PNP bipolar transistor suitable for low power amplification in various electronic circuits. It features a 3-pin SOT-416 surface mount package designed for compact and efficient PCB integration in industrial and commercial electronics.
This transistor supports a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -65 V, making it suitable for signal processing and switching applications requiring moderate current and voltage ratings. The device operates reliably across a temperature range from -65°C to 150°C, ensuring stable performance in harsh environmental conditions in automotive, industrial control, and consumer electronics.
It achieves a maximum power dissipation of 150 mW, requiring appropriate thermal management in compact assemblies. With a minimum DC current gain (hFE) of 125 and a transition frequency of 100 MHz, BC856BT supports effective amplification in high-frequency circuits.
The transistor is a single PNP polarity device with a 3-pin configuration tailored for standard PCB layouts. Compliance with RoHS standards ensures it meets environmental safety requirements.
Its compact physical dimensions (1.8 mm length, 1.75 mm width, 0.95 mm height) allow integration in space-constrained designs such as mobile devices, instrumentation modules, and embedded systems.
3-pin SOT-416 surface mount package. Maximum DC collector current: -100 mA. Maximum collector emitter voltage: -65 V. Minimum DC current gain: 125. Maximum transition frequency: 100 MHz. Operating temperature range: -65°C to 150°C.
Power dissipation: 150 mW. RoHS compliant.
This Nexperia transistor is ideal for use in manufacturing, industrial control, communication devices, and automotive electronics. For additional design support, comprehensive technical documentation, 3D models, schematics, and footprints are available through dedicated design tools.
Explore the Electronics & Electricals category at EnvMart for more high-quality semiconductor components including Bipolar Transistors, digital transistors, and power transistors.
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