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Nexperia Small Signal PNP Transistor, Maximum Collector Current -100 mA, Collector Emitter Voltage -65 V, 3-Pin BC856BT

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 0.95mm
Length 1.8mm
Model BC856BT
Width 1.75mm
Mount Type Surface
Series BC856T
Maximum Operating Temperature 150°C
Package Type SOT-416
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -65V
Minimum DC Current Gain hFE 125
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Maximum Power Dissipation Pd 150mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • 3-pin SOT-416 surface mount package ensures compact integration.
  • Operates reliably from a minimum temperature of -65°C up to a maximum of 150°C.
  • Maximum power dissipation of 150 mW supports efficient thermal management.
  • High minimum DC current gain of 125 for effective signal amplification.
  • Maximum transition frequency of 100 MHz suitable for high-frequency circuits.
  • Single transistor configuration with PNP polarity for complementary circuit designs.
  • Compliant with RoHS standards ensuring environmental safety.

Product Description

Nexperia BC856BT is a small signal PNP bipolar transistor suitable for low power amplification in various electronic circuits. It features a 3-pin SOT-416 surface mount package designed for compact and efficient PCB integration in industrial and commercial electronics.

This transistor supports a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -65 V, making it suitable for signal processing and switching applications requiring moderate current and voltage ratings. The device operates reliably across a temperature range from -65°C to 150°C, ensuring stable performance in harsh environmental conditions in automotive, industrial control, and consumer electronics.

It achieves a maximum power dissipation of 150 mW, requiring appropriate thermal management in compact assemblies. With a minimum DC current gain (hFE) of 125 and a transition frequency of 100 MHz, BC856BT supports effective amplification in high-frequency circuits.

The transistor is a single PNP polarity device with a 3-pin configuration tailored for standard PCB layouts. Compliance with RoHS standards ensures it meets environmental safety requirements.

Its compact physical dimensions (1.8 mm length, 1.75 mm width, 0.95 mm height) allow integration in space-constrained designs such as mobile devices, instrumentation modules, and embedded systems.

3-pin SOT-416 surface mount package. Maximum DC collector current: -100 mA. Maximum collector emitter voltage: -65 V. Minimum DC current gain: 125. Maximum transition frequency: 100 MHz. Operating temperature range: -65°C to 150°C.

Power dissipation: 150 mW. RoHS compliant.

This Nexperia transistor is ideal for use in manufacturing, industrial control, communication devices, and automotive electronics. For additional design support, comprehensive technical documentation, 3D models, schematics, and footprints are available through dedicated design tools.

Explore the Electronics & Electricals category at EnvMart for more high-quality semiconductor components including Bipolar Transistors, digital transistors, and power transistors.

Nexperia Small Signal PNP Transistor, Maximum Collector Current -100 mA, Collector Emitter Voltage -65 V, 3-Pin BC856BT
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Frequently Asked Questions

The maximum collector current for this model is -100 mA.

It operates reliably within a temperature range of -65°C to 150°C.

The maximum collector-emitter voltage is -65 V.

This model comes in a 3-pin SOT-416 surface mount package.

The minimum DC current gain (hFE) is 125.

The maximum transition frequency is 100 MHz, making it suitable for high-frequency circuits.

The dimensions are 1.8 mm in length, 1.75 mm in width, and 0.95 mm in height.

Yes, it is compliant with RoHS standards, ensuring environmental safety.

The maximum power dissipation is 150 mW.

It has a single transistor configuration with PNP polarity.

It is suitable for low power amplification in automotive, industrial control, and consumer electronics applications.

The maximum emitter-base voltage (VEBO) is -5 V.

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