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onsemi Power NPN Bipolar Transistor 1.2 A 160 V TO-126 3-Pin KSC2690AYS

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 27.26mm
Length 8mm
Model KSC2690AYS
Width 3.25mm
Mount Type Through Hole
Series KSC2690A
Maximum Operating Temperature 150°C
Package Type TO-126
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 160V
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 1.2A
Transistor Configuration Single
Maximum Transition Frequency ft 155MHz

Key Features

  • Designed for through-hole mounting with a 3-pin configuration.
  • Maximum power dissipation of 20 W ensuring reliable high-power operation.
  • Minimum DC current gain (hFE) of 60 for effective amplification.
  • Maximum transition frequency of 155 MHz suitable for high frequency circuits.
  • Operating temperature range up to 150°C for enhanced thermal reliability.
  • No automotive standard compliance.
  • Single transistor configuration with NPN polarity.
  • Maximum voltages include collector-base 160 V and emitter-base 5 V.

Product Description

onsemi KSC2690AYS is a power NPN bipolar junction transistor designed for various electronic applications requiring robust switching and amplification capabilities. Featuring a maximum DC collector current of 1.2 A and a collector emitter voltage rating of 160 V, this transistor offers efficient operation in power circuits.

Its TO-126 package facilitates through-hole mounting, providing ease of integration in standard PCB designs. The transistor’s minimum DC current gain (hFE) of 60 and high transition frequency of 155 MHz make it suitable for high-frequency amplifier stages and switching applications.

With a maximum power dissipation of 20 W, the KSC2690AYS ensures reliable thermal performance in demanding environments. It operates reliably at temperatures up to 150°C, assuring stability in industrial and commercial electronics.

Compact physical dimensions of 27.26 mm height, 8 mm length, and 3.25 mm width allow for space-efficient designs. This NPN transistor is configured as a single device with a 3-pin setup optimized for power semiconductor use.

Typical applications include power regulation, amplification, switching in industrial controls, audio equipment, and general electronic circuits. It is an essential component for electronic engineers seeking performance and reliability in semiconductor devices.

Designed for through-hole mounting with a 3-pin configuration. Maximum power dissipation of 20 W ensuring reliable high-power operation. Minimum DC current gain (hFE) of 60 for effective amplification. Maximum transition frequency of 155 MHz suitable for high frequency circuits.

Operating temperature range up to 150°C for enhanced thermal reliability. Compact dimensions: height 27.26 mm, length 8 mm, width 3.25 mm. No automotive standard compliance. Single transistor configuration with NPN polarity.

Maximum voltages include collector-base 160 V and emitter-base 5 V. Explore more power bipolars and semiconductors at EnvMart to meet your industry demands in electronics design and manufacturing.

Explore more products in our Bipolar Transistors category.

onsemi Power NPN Bipolar Transistor 1.2 A 160 V TO-126 3-Pin KSC2690AYS
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for the KSC2690AYS is 160 V.

This transistor has a maximum power dissipation of 20 W, ensuring reliable operation in high-power applications.

The operating temperature range for this model is up to 150°C, providing enhanced thermal reliability.

The minimum DC current gain (hFE) for the KSC2690AYS is 60, which is suitable for effective amplification.

The maximum transition frequency (ft) for the KSC2690AYS is 155 MHz, making it suitable for high-frequency circuits.

This model is designed for through-hole mounting with a 3-pin configuration, facilitating integration into standard PCB designs.

The dimensions of this transistor are 27.26 mm in height, 8 mm in length, and 3.25 mm in width.

The maximum DC collector current (Idc) for the KSC2690AYS is 1.2 A, suitable for various electronic applications.

This transistor is configured as a single device with NPN polarity.

Typical applications for this transistor include power regulation, amplification, and switching in industrial controls and audio equipment.

The KSC2690AYS comes in a TO-126 package type, which is designed for through-hole mounting.

The maximum voltage ratings for the KSC2690AYS include a collector-base voltage (VCBO) of 160 V and an emitter-base voltage (VEBO) of 5 V.

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