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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 27.26mm |
| Length | 8mm |
| Model | KSC2690AYS |
| Width | 3.25mm |
| Mount Type | Through Hole |
| Series | KSC2690A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-126 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 160V |
| Minimum DC Current Gain hFE | 60 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 160V |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | 1.2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 155MHz |
onsemi KSC2690AYS is a power NPN bipolar junction transistor designed for various electronic applications requiring robust switching and amplification capabilities. Featuring a maximum DC collector current of 1.2 A and a collector emitter voltage rating of 160 V, this transistor offers efficient operation in power circuits.
Its TO-126 package facilitates through-hole mounting, providing ease of integration in standard PCB designs. The transistor’s minimum DC current gain (hFE) of 60 and high transition frequency of 155 MHz make it suitable for high-frequency amplifier stages and switching applications.
With a maximum power dissipation of 20 W, the KSC2690AYS ensures reliable thermal performance in demanding environments. It operates reliably at temperatures up to 150°C, assuring stability in industrial and commercial electronics.
Compact physical dimensions of 27.26 mm height, 8 mm length, and 3.25 mm width allow for space-efficient designs. This NPN transistor is configured as a single device with a 3-pin setup optimized for power semiconductor use.
Typical applications include power regulation, amplification, switching in industrial controls, audio equipment, and general electronic circuits. It is an essential component for electronic engineers seeking performance and reliability in semiconductor devices.
Designed for through-hole mounting with a 3-pin configuration. Maximum power dissipation of 20 W ensuring reliable high-power operation. Minimum DC current gain (hFE) of 60 for effective amplification. Maximum transition frequency of 155 MHz suitable for high frequency circuits.
Operating temperature range up to 150°C for enhanced thermal reliability. Compact dimensions: height 27.26 mm, length 8 mm, width 3.25 mm. No automotive standard compliance. Single transistor configuration with NPN polarity.
Maximum voltages include collector-base 160 V and emitter-base 5 V. Explore more power bipolars and semiconductors at EnvMart to meet your industry demands in electronics design and manufacturing.
Explore more products in our Bipolar Transistors category.
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