DiodesZetex N-Channel MOSFET 30 V, 10.5 A, Enhancement Mode, Surface Mount PowerDI3333 Package, 8-Pin DMG7430LFG-7

The DiodesZetex DMG7430LFG-7 is a high-performance N-Channel MOSFET transistor engineered for electronic applications requiring efficient power switching at 30 volts and continuous current up to 10.5 amperes.

This MOSFET uses an enhancement mode channel, making it well-suited for use in power management circuits, DC-DC converters, load switches, and switching regulators.

The device is housed in a compact 8-pin PowerDI3333 surface mount package, measuring 3.35 mm in length and width, and 850 microns in height, enabling efficient PCB space utilization and ease of assembly in industrial electronics manufacturing.

Its low on-resistance of 15 milliohms helps reduce conduction losses, improving overall circuit efficiency. The maximum power dissipation of 2.2 watts ensures the device maintains performance under thermal stress in demanding usage.

Operating reliably over a temperature range from -55°C to 150°C, the DMG7430LFG-7 is suitable for automotive and industrial applications requiring robust thermal tolerance. It complies with the automotive standard AEC-Q101, confirming its reliability in automotive environments.

The typical gate charge of 26.7 nC supports fast switching speeds, which is critical for high-frequency power electronics applications.

Its maximum gate-source voltage rating of -20 V to +20 V protects the device from voltage stresses during operation. Manufactured in China, this product meets industrial-grade electronic component quality requirements.

Provides a maximum continuous drain current of 10.5 amperes. Operates with a maximum drain-source voltage of 30 volts. Utilizes enhancement mode channel for controlled switching. Includes an 8-pin PowerDI3333 surface mount package suitable for compact PCB designs.

Features low drain-source resistance of 15 milliohms for higher efficiency. Maximum power dissipation rating of 2.2 watts ensures reliable thermal performance. Operates within a temperature range of -55°C to 150°C for demanding environments.

Typical gate charge at Vgs is 26.7 nanoCoulombs facilitating fast switching. Designed according to Automotive Standard AEC-Q101 for quality and durability. Compact dimensional size with 3.35 mm width and length, and 850 microns height.

This N-Channel MOSFET transistor is ideally suited for industrial, automotive, and power electronics applications, including power management circuits, switching regulators, and automotive systems requiring reliable and efficient switching components.

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