Infineon OptiMOS 3 N-Channel MOSFET 64 A Continuous Drain Current 250 V Drain Source Voltage TO-220 IPP200N25N3GXKSA1

Infineon IPP200N25N3GXKSA1 OptiMOS 3 N-Channel MOSFET is a power-switching transistor optimized for high-voltage and high-current industrial applications. Rated for 64 A continuous drain current and 250 V drain-source voltage, it is suitable for use in power conversion, motor drive, and other demanding electronic contexts requiring robust performance and reliability.

This device features an enhancement-mode N-channel design with a low RDS(on) of 20 mΩ, minimizing conduction losses and enhancing thermal management during high-current operation. The typical gate charge of 64 nC allows adequate switching speed while maintaining manageable drive requirements. Its maximum power dissipation capacity is 300 W, enabling it to handle substantial electrical loads effectively.

The MOSFET is housed in a TO-220 package with a 3-pin layout, designed for through-hole mounting and easy attachment to heatsinks via the package tab. It supports a wide operating temperature range from -55 °C to 175 °C, making it suitable for environments with extreme ambient or junction temperature conditions.

The maximum gate-source voltage rating of ±20 V enables compatibility with standard gate drive voltages common in industrial switch-mode power supplies and motor controls. Its robust gate tolerance contributes to reliable performance in various power management applications.

Ideal applications include industrial motor drive power stages, switch-mode power supplies and converters, high-voltage battery management systems, and audio amplifier output-stage switching. Its through-hole package form factor also makes it suitable for prototyping and repairs in laboratory or educational settings.

The device supports a maximum continuous drain current of 64 A. Drain-source voltage rating is 250 V for high-voltage applications. Low on-resistance of 20 mΩ reduces conduction losses. Typical gate charge is 64 nC for balanced switching performance.

Power dissipation rating of 300 W allows handling of heavy electrical loads. Operates reliably from -55 °C to 175 °C ambient temperatures. 3-pin TO-220 package allows through-hole mounting and heatsink attachment. Maximum gate-source voltage of ±20 V suitable for common gate drives.

This highly reliable MOSFET from Infineon is designed to meet demanding industrial, laboratory prototyping, and commercial electronic power management needs. Browse more high-quality semiconductor products from Infineon and related brands at EnvMart.