DiodesZetex N-Channel MOSFET 310 mA, 250 V Enhancement Mode, 4-Pin SOT-223 Package ZVN4525GTA

DiodesZetex ZVN4525GTA is an N-Channel MOSFET designed for high efficiency switching and signal amplification in electronic circuits requiring precise power handling. Its maximum continuous drain current of 310 mA and drain-source voltage of 250 V make it suitable for a variety of low to moderate power applications.

The transistor features an enhancement channel mode and is housed in a compact 4-pin SOT-223 surface-mount package, optimizing it for dense PCB layouts. With a power dissipation capacity of 2 W, it delivers reliable performance under typical industrial and automotive conditions.

This MOSFET operates safely over a broad temperature range from -55°C to 150°C and meets stringent automotive standards AEC-Q100, AEC-Q200, and AEC-Q101, ensuring durability and reliability in demanding automotive electronic systems.

The device provides a typical gate charge of 2.6 nC at the gate-source voltage, facilitating efficient gate driving with minimal power loss. The maximum gate-source voltage tolerance of ±40 V protects against voltage spikes that could damage the transistor.

Compact package dimensions - length 6.7 mm, width 3.7 mm, height 1.7 mm - allow for integration into space-constrained designs. The forward voltage of approximately -1 V ensures low conduction losses improving overall circuit efficiency.

This MOSFET is an ideal component for industrial electronics, automotive control systems, power management circuits, and various other applications that demand robust, efficient semiconductor switching elements.

The device supports a maximum continuous drain current of 310 mA. Maximum drain-source voltage is rated at 250 V ensuring high voltage operation. Equipped with a surface mount SOT-223 package with 4 pins for easy PCB integration.

Has an enhancement mode channel operation with a maximum power dissipation of 2 W. Operates reliably within temperature range of -55°C to 150°C. Typical gate charge is 2.6 nC at Vgs, allowing efficient driving characteristics.

Maximum gate-source voltage rating is ±40 V to protect against voltage spikes. Forward voltage is approximately -1 V indicating low conduction losses. Compact dimensions of 6.7 mm length, 3.7 mm width, and 1.7 mm height.

Certified to automotive standards AEC-Q100, AEC-Q200, and AEC-Q101 ensuring robustness in automotive environments. Explore the wide range of semiconductor components and MOSFET devices available at EnvMart for your next industrial or automotive project.