DiodesZetex N-Channel MOSFET 230 mA, 250 V Enhancement, 6-Pin SOT-23 ZVN4525E6TA

DiodesZetex ZVN4525E6TA is a precision N-Channel MOSFET designed for surface mount technology applications. This transistor delivers a maximum continuous drain current of 230 mA and can handle drain-source voltages up to 250 V, making it suitable for low-power electronic switching and amplification circuits.

The device is housed in a compact 6-pin SOT-23 package, enabling space-constrained PCB layouts with excellent thermal performance due to its maximum power dissipation rating of 1.1 watts. The enhancement mode channel ensures stable operation with a low on-resistance of 9.5 ohms, reducing power loss during conduction.

This MOSFET offers a wide operating temperature range from -55°C up to 150°C, supporting automotive and industrial temperature demands. It holds certifications to meet stringent automotive standards including AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200, highlighting its suitability for automotive electronics.

Physical dimensions of 3 mm length, 1.75 mm width, and 1.3 mm height allow integration into compact modules. The gate charge typical value of 2.6 nC at specified gate voltages facilitates efficient switching, while the wide gate-source voltage margin (-40 V to +40 V) accommodates diverse control signal requirements. Forward voltage rating of -1.1 V contributes to enhanced switching speed and efficiency.

Ideal for industrial, automotive, and consumer electronic applications requiring reliable MOSFET transistors in surface mount packages. This model is sourced from DiodesZetex, with manufacturing origin in China.

Features an enhancement mode with a maximum drain-source resistance of 9.5 ohms. Equipped with 6 pins in a compact SOT-23 package for efficient mounting. Has a maximum power dissipation of 1.1 watts suitable for low power switching.

Operates reliably within a temperature range of -55°C to +150°C. Includes automotive industry standards compliance: AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200. Measures 3 mm length, 1.75 mm width, and 1.3 mm height ensuring small footprint integration.

Typical gate charge is 2.6 nC at Vgs, enabling efficient gate control. Supports gate-source voltage range of -40 V to +40 V for versatile applications. Forward voltage is rated at -1.1 V for enhanced switching performance.

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