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DiodesZetex P-Channel MOSFET 3.3 A 20 V Enhancement 3-Pin SOT-23 DMP2160U-7
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 3mm |
| Model | DMP2160U-7 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | DMP2160U |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 6.5nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Key Features
- The device is a type P channel enhancement mode MOSFET providing efficient switching.
- Features a maximum drain-source resistance of 140 milliohms ensuring low conduction losses.
- Supports high operating temperatures up to 150°C suitable for demanding applications.
- Compact 3-pin SOT-23 surface mount package with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height.
- Typical gate charge of 6.5 nanocoulombs allows fast switching performance.
- Gate-source voltage rating of ±12 volts for robust gate control.
- Power dissipation of 1.4 watts supports moderate power applications.
- Complies with automotive standard AEC-Q101 indicating reliability in automotive environments.
Product Description
DiodesZetex DMP2160U-7 is a P-Channel MOSFET designed for surface-mount applications offering durable and efficient switching capabilities. It supports a maximum continuous drain current of 3.3 amperes and a maximum drain-source voltage of 20 volts, making it suitable for a wide range of low voltage power management circuits.
The device is housed in a compact 3-pin SOT-23 package with precise dimensions: length 3 mm, width 1.4 mm, and height 1.1 mm, enabling space-saving PCB designs in industrial, automotive, and consumer electronics.
Its low on-resistance of 140 milliohms minimizes power losses, while the typical gate charge of 6.5 nanocoulombs provides quick switching speed, essential for efficient energy management and signal control circuits.
The MOSFET features a gate-source voltage tolerance of up to ±12 volts and forward voltage of -1.2 volts enhancing its robustness in diverse circuit conditions. With maximum power dissipation of 1.4 watts and an operating temperature range from -55°C to 150°C, it is optimized for harsh environments including automotive and industrial settings.
Certified to automotive standard AEC-Q101, the DMP2160U-7 ensures reliable performance under stringent quality and durability requirements. The device operates in enhancement mode with a P-channel type for effective switching.
Compact packaging and pin configuration facilitate integration in high-density electronics. Wide temperature and voltage ratings support demanding applications in power control and regulation. Designed for surface mount technology to simplify automated manufacturing.
Manufactured in China with global availability. This MOSFET is ideal for industrial, automotive, power supply, and consumer electronics applications, providing dependable performance and efficient power handling. Explore more components in the MOSFET category to find complementary discrete semiconductors for your design needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.3 amperes.
This MOSFET has a maximum drain-source voltage rating of 20 volts.
The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.
The maximum operating temperature for this MOSFET is 150°C.
The typical gate charge for the DMP2160U-7 is 6.5 nanocoulombs.
This model supports a maximum power dissipation of 1.4 watts.
The gate-source voltage rating for this MOSFET is ±12 volts.
The forward voltage of the DMP2160U-7 is -1.2 volts.
This MOSFET complies with the automotive standard AEC-Q101.
The channel type of this device is P-channel enhancement mode.
The maximum drain-source resistance for this model is 140 milliohms.
This model uses surface mount technology for installation.
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