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DiodesZetex N-Channel MOSFET 6.4 A 20 V Enhancement 3-Pin SOT-23 DMN2041L-7

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DiodesZetex N-Channel MOSFET 6.4 A 20 V Enhancement 3-Pin SOT-23 DMN2041L-7

Name: DiodesZetex N-Channel MOSFET 6.4 A 20 V Enhancement 3-Pin SOT-23 DMN2041L-7
Brand: DiodesZetex
SKU: 409067
Price: 0.21 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	China
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	DMN2041L-7
Width	1.4mm
Mount Type	Surface
Series	DMN2041L
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	6.4A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	41mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	780mW
Typical Gate Charge Qg @ Vgs	15.6nC
Maximum Gate Source Voltage Vgs	-12, +12V
Forward Voltage Vf	-1.2V

Key Features

Compact 3-pin SOT-23 package suitable for surface mounting.
Enhancement mode transistor designed for efficient switching.
Maximum power dissipation of 780 mW ensuring reliable operation.
Wide operating temperature range from -55°C to 150°C.
Low maximum drain-source resistance of 41 mΩ enhances conduction efficiency.
Typical gate charge of 15.6 nC enabling fast switching speeds.
Complies with automotive standard AEC-Q101 for quality assurance.

Product Description

DiodesZetex DMN2041L-7 is an N-Channel Enhancement Mode MOSFET designed for surface mounting applications. It supports a maximum continuous drain current of 6.4 A and a maximum drain-source voltage of 20 V, making it suitable for a variety of power management and switching circuits in industrial, automotive, and consumer electronics.

This device is housed in a compact 3-pin SOT-23 package measuring 3 mm in length, 1.4 mm in width, and 1.1 mm in height, facilitating high-density PCB designs. The MOSFET features a low drain-source resistance (Rds) of 41 mΩ, which minimizes conduction losses and improves efficiency in power applications.

The DMN2041L-7 offers a maximum power dissipation of 780 mW and can operate reliably within a temperature range from -55°C up to 150°C. It exhibits a typical gate charge of 15.6 nC, enabling rapid switching speeds critical for modern electronics. The gate-source voltage withstands ±12 V, providing robust gate control.

Certified to automotive standard AEC-Q101, the DMN2041L-7 is well-suited for demanding automotive electronic systems requiring high reliability. It is designed for mounting on the surface of circuit boards, simplifying manufacturing processes.

Compact 3-pin SOT-23 package for space-saving designs. Low on-resistance enhances efficiency and reduces heat dissipation. Capable of handling up to 6.4 A continuous drain current. Wide operating temperature span ensures stable performance in harsh environments.

Compliance with AEC-Q101 automotive standard assures quality. High maximum operating temperature up to 150°C allows use in demanding applications. Typical gate charge supports fast switching capability. Robust gate-source voltage tolerance extends device protection.

This MOSFET is ideal for power management in industrial automation, automotive electronics, and general electronic device manufacturing. Its compact package, reliable specification set, and automotive certification also make it suitable for use in commercial and laboratory electronic projects.

Explore the full range of semiconductor and MOSFET products at EnvMart for your application needs and industrial requirements.