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DiodesZetex N-Channel MOSFET 10 A 30 V Enhancement Mode 8-Pin SOIC Package DMG4466SSS-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMG4466SSS-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | DMG |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.42W |
| Typical Gate Charge Qg @ Vgs | 10.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1V |
Key Features
- Enhancement mode channel type provides reliable switching performance.
- Surface mount SOIC package designed for compact assembly.
- Maximum power dissipation of 1.42 W ensures operation under moderate load.
- AEC-Q101 automotive standard for enhanced durability and reliability.
- Wide operating temperature range from -55°C to 150°C for diverse industrial environments.
- Low maximum drain source resistance of 33 mΩ reduces conduction losses.
- Typical gate charge of 10.5 nC enables fast switching.
- Maximum gate-source voltage of ±25 V for robust control.
Product Description
DiodesZetex DMG4466SSS-13 N-Channel MOSFET is engineered for efficient power switching applications offering a maximum continuous drain current of 10 A and a maximum drain-source voltage of 30 V. Packaged in an 8-pin SOIC surface mount case, this MOSFET meets automotive-grade AEC-Q101 standard, guaranteeing high reliability under demanding operational conditions.
Its enhancement mode channel and low on-resistance of 33 milliohms minimize power losses, making it suitable for compact electronic circuits requiring efficient switching.
The device supports a maximum power dissipation of 1.42 W and operates over a wide temperature span from -55°C up to 150°C, allowing use in industrial, automotive, and embedded system applications.
The gate is designed for fast switching with a typical gate charge of 10.5 nC and can tolerate gate-source voltages up to ±25 V, ensuring robustness in control circuitry. Physical dimensions are suitable for space-constrained PCB layouts, facilitating integration in modern compact electronics.
Enhancement mode N-Channel MOSFET technology. Maximum continuous drain current of 10 A at 30 V drain-source voltage. Low maximum drain-source resistance of 33 mΩ improves efficiency. Meets AEC-Q101 automotive standards for rigorous environments.
Wide temperature operation from -55°C to 150°C ensures versatility. Compact SOIC 8-pin surface mount package for efficient PCB layout. Maximum power dissipation rated at 1.42 W for stable operation. Typical gate charge of 10.5 nC allows quick switching response.
Maximum gate-source voltage tolerance of ±25 V ensures control integrity. This MOSFET is ideal for industrial, automotive, power management, and embedded electronic systems where efficiency, reliability, and temperature resilience are key requirements.
Explore more DiodesZetex semiconductor products and components on EnvMart for advanced electronics design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for the DMG4466SSS-13 is 10 A.
This model has a maximum drain-source voltage rating of 30 V.
The maximum power dissipation for this MOSFET is rated at 1.42 W.
It operates over a wide temperature range from -55°C to 150°C.
The DMG4466SSS-13 is packaged in an 8-pin SOIC surface mount package.
The maximum gate-source voltage tolerance is ±25 V.
The typical gate charge is 10.5 nC.
It has a low maximum drain-source resistance of 33 mΩ.
This model meets the AEC-Q101 automotive standard for enhanced durability and reliability.
The dimensions are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
This MOSFET utilizes an enhancement mode N-channel type.
It is suitable for industrial, automotive, power management, and embedded electronic systems.
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