DiodesZetex P-Channel MOSFET 12 A 30 V Enhancement Mode 8-Pin SOIC DMG4413LSS-13

DiodesZetex DMG4413LSS-13 is a high-performance P-Channel MOSFET designed for efficient power switching applications. This enhancement mode transistor can handle a continuous drain current of 12 amperes and a maximum drain-source voltage of 30 volts.

The device is housed in a compact 8-pin SOIC surface-mount package that offers ease of integration into modern electronic circuits. Its low maximum drain-source resistance of 10.2 milliohms ensures minimal power loss and enhanced energy efficiency.

With a maximum gate-source voltage rating of -20 V to +20 V and a maximum power dissipation of 2.2 W, this MOSFET is suitable for robust electronic designs requiring reliable switching operations. It features a typical gate charge of 46 nanoCoulombs facilitating fast switching speeds.

The operating temperature range from -55°C to 150°C allows this device to perform reliably in demanding environments, including automotive and industrial sectors. The compact physical dimensions of 4.95 mm length, 3.95 mm width, and 1.5 mm height make it suited for space-constrained PCB layouts.

The device conforms to the automotive industry standard AEC-Q101, ensuring stringent quality and durability requirements are met. Its P-Channel design is optimal for applications requiring high-side switching or load switching in power management circuits.

Manufactured in China, this product comes in new condition and is ready for deployment in commercial and industrial electronics. This MOSFET is ideal for power management, automotive electronics, and various industrial electronic applications requiring durable and efficient switching components.

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