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DiodesZetex P-Channel MOSFET, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 3mm
Model BSS84
Width 1.4mm
Mount Type Surface
Series BSS84
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q100, AEC-Q101, AEC-Q104, AEC-Q200
Channel Type Type P
Maximum Continuous Drain Current Id 130mA
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 10Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 300mW
Typical Gate Charge Qg @ Vgs 0.59nC
Maximum Gate Source Voltage Vgs -20, +20V
P-Channel MOSFET Transistor, 130 mA, 50 V, 3-Pin SOT-23 Diodes Inc BSS84TABrand DiodesZetex

Key Features

  • P-Channel enhancement mode MOSFET with 130 mA maximum continuous drain current.
  • Maximum drain-source voltage rating of 50 V for moderate voltage applications.
  • Compact 3-pin SOT-23 surface mount package for space-saving PCB design.
  • Low maximum drain-source resistance of 10 ohms to reduce power dissipation.
  • Maximum power dissipation of 300 mW suitable for low-power electronics.
  • Wide operating temperature range from -55°C to 150°C for versatile use.
  • Typical gate charge of 0.59 nC at Vgs enables efficient fast switching.
  • Gate-source voltage range from -20 V to +20 V ensures safe operation.

Product Description

DiodesZetex BSS84 is a high-quality P-Channel MOSFET transistor designed for switching and amplification in electronic circuits. It supports a maximum continuous drain current of 130 mA and can withstand a maximum drain-source voltage of 50 V, operating in enhancement mode with a compact 3-pin SOT-23 surface mount package.

This MOSFET features a low maximum drain-source resistance of 10 ohms to minimize power losses and improve efficiency in low power signal switching and amplification applications. It is capable of dissipating up to 300 mW power under operation.

The device maintains reliable operation across a wide temperature range from -55°C to 150°C, allowing deployment in automotive and industrial control systems. It also complies with automotive quality standards AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200, making it suitable for automotive electronics applications requiring rigorous reliability.

Its typical gate charge of 0.59 nC at gate-source voltage supports fast switching speeds in digital circuits. The gate voltage can safely operate between -20 V and +20 V, providing strong control and stability.

The MOSFET uses an enhancement mode channel and is a P-Channel device for negative voltages. Its surface mount SOT-23 package offers a compact footprint with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height, fitting tightly into space-constrained PCB layouts.

The product originates from China and is intended for new condition applications. Ideal use cases for this MOSFET include low-power switching, amplification, automotive control modules, industrial control systems, and consumer electronics.

Explore more MOSFETs and semiconductor solutions on EnvMart for a wide range of industrial, automotive, and electronic development needs.

DiodesZetex P-Channel MOSFET, 130 mA, 50 V, Enhancement Mode, 3-Pin SOT-23 BSS84
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Frequently Asked Questions

The maximum continuous drain current for this model is 130 mA.

It has a maximum drain-source voltage rating of 50 V, suitable for moderate voltage applications.

The BSS84 comes in a compact 3-pin SOT-23 surface mount package with dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height.

The maximum power dissipation is 300 mW, making it suitable for low-power electronics.

It operates over a wide temperature range from -55°C to 150°C.

The maximum gate-source voltage range is from -20 V to +20 V, ensuring safe operation.

The typical gate charge at Vgs is 0.59 nC, which supports efficient fast switching.

It complies with automotive quality standards AEC-Q100, AEC-Q101, AEC-Q104, and AEC-Q200.

This model features a P-Channel enhancement mode channel, designed for negative voltages.

The maximum drain-source resistance is 10 ohms, which helps reduce power dissipation.

It is suitable for low-power switching, amplification, automotive control modules, and industrial control systems.

The BSS84 originates from China.

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