DiodesZetex N-Channel Enhancement MOSFET 170 mA, 100 V, 3-Pin SOT-23 Package BSS123TA

DiodesZetex BSS123TA is an N-Channel Enhancement MOSFET designed for switching and amplification applications with a maximum continuous drain current of 170 mA and a maximum drain source voltage of 100 V. It features a compact 3-pin SOT-23 surface mount package, ideal for space-constrained electronic circuits.

This MOSFET supports reliable operation with a maximum power dissipation of 300 mW and a forward voltage drop of 1.2 V. Operating temperatures range from -55°C to 150°C, making it suitable for automotive and industrial electronic uses. The maximum drain source resistance of 10 Ω helps maintain efficient conduction and low power loss.

Compliant with the AEC-Q101 automotive standard, the BSS123TA ensures durability and performance in automotive electronic systems. Its physical dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height allow easy PCB integration.

Rated maximum continuous drain current of 170 mA. Maximum drain source voltage rating of 100 V. Enhancement mode N-Channel design for normally off switching. Compact 3-pin SOT-23 surface mount package. Power dissipation rating of 300 mW.

Forward voltage drop of 1.2 V. Operational temperature from -55 to 150 degrees Celsius. Maximum drain source resistance of 10 ohms. Automotive standard compliance with AEC-Q101. Package size with 3 mm length, 1.4 mm width, and 1.1 mm height.

This MOSFET is widely applicable in industrial, automotive, and consumer electronics for switching circuits, amplifiers, and signal processing, providing efficient and reliable performance.

Explore the broad range of semiconductor devices and discrete MOSFETs available for your electronic design needs in the Electronics & Electricals category at EnvMart.