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DiodesZetex P-Channel MOSFET 1.6 A 100 V Enhancement Surface Mount 6-Pin SOT-23 ZXMP10A17E6

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DiodesZetex P-Channel MOSFET 1.6 A 100 V Enhancement Surface Mount 6-Pin SOT-23 ZXMP10A17E6

Name: DiodesZetex P-Channel MOSFET 1.6 A 100 V Enhancement Surface Mount 6-Pin SOT-23 ZXMP10A17E6
Brand: DiodesZetex
SKU: 408325
Price: 0.61 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.3mm
Length	3.1mm
Model	ZXMP10A17E6
Width	1.8mm
Mount Type	Surface
Series	ZXMP10A17E6
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	6
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	1.6A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	450mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.7W
Typical Gate Charge Qg @ Vgs	10.7nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-0.95V

Key Features

Type P channel enhancement mode MOSFET suitable for various electronic applications.
Maximum continuous drain current is 1.6 A for robust current handling.
Maximum drain source voltage of 100 V with low drain source resistance of 450 mΩ.
Compact 6-pin SOT-23 package designed for surface mount assembly.
Operates reliably from -55°C up to 150°C, supporting automotive standard AEC-Q101.
Typical gate charge of 10.7 nC at Vgs ensuring efficient switching performance.
Maximum power dissipation rated at 1.7 W for thermal stability.
Maximum gate source voltage range of -20 V to +20 V for versatile gate drive compatibility.

Product Description

DiodesZetex ZXMP10A17E6 is a robust P-Channel MOSFET featuring a maximum continuous drain current of 1.6 A and a maximum drain source voltage of 100 V. Packaged in a compact 6-pin SOT-23 surface mount format, this device is ideal for modern electronic circuit designs requiring efficient switching and low on-state resistance.

The MOSFET operates in enhancement mode with type P channel characteristics, supporting industrial and automotive applications compliant with AEC-Q101 standards. Its low typical gate charge of 10.7 nC ensures fast switching and reduced power losses, making it well suited for power management and control circuits.

With an operating temperature range from -55°C to 150°C and maximum power dissipation of 1.7 W, the ZXMP10A17E6 maintains performance stability under demanding conditions. Its forward voltage of -0.95 V and maximum gate source voltage range of -20 V to +20 V provide reliable control over conduction and switching states.

The device’s physical dimensions of 3.1 mm length, 1.8 mm width, and 1.3 mm height allow for compact PCB layouts and surface mounting, facilitating automated assembly and integration into high-density electronic equipment.

Type P channel enhancement mode MOSFET. Maximum continuous drain current of 1.6 A. Maximum drain source voltage of 100 V with 450 mΩ drain source resistance. 6-pin SOT-23 surface mount package. Operating temperature range: -55°C to 150°C.

Typical gate charge of 10.7 nC at Vgs. Maximum power dissipation of 1.7 W. Automotive grade standard AEC-Q101 compliant. Compact physical dimensions for efficient PCB layout.

This MOSFET is widely applicable in electronic, automotive, and power management systems, delivering reliable, efficient switching performance. For engineering projects demanding compactness and performance, the ZXMP10A17E6 provides a trustworthy solution.

Explore more MOSFET and semiconductor components suitable for industrial, automotive, and electronic manufacturing applications on EnvMart’s Electronics & Electricals category to support your design and production needs.