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DiodesZetex N-Channel MOSFET 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-7-F

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DiodesZetex N-Channel MOSFET 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-7-F

Name: DiodesZetex N-Channel MOSFET 115 mA, 60 V Enhancement, 3-Pin SOT-23 2N7002-7-F
Brand: DiodesZetex
SKU: 408322
Price: 0.04 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	1.1mm
Length	3mm
Model	2N7002-7-F
Width	1.4mm
Mount Type	Surface
Series	2N7002
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	115mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	13.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300mW
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.4V

Key Features

Enhanced mode NMOS transistor with a package type of SOT-23.
Supports a maximum gate-source voltage range of -20 V to +20 V.
Exhibits a maximum drain-source resistance of 13.5 Ω.
Maximum power dissipation is rated at 300 mW.
Operates reliably within temperatures from -55°C to 150°C.
Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height.
Automotive standard compliant with AEC-Q101.
Surface mount device with 3-pin configuration.

Product Description

DiodesZetex 2N7002-7-F is a high-quality N-Channel MOSFET transistor engineered for efficient switching and amplification in electronic circuits. The device operates at a maximum continuous drain current of 115 mA with a maximum drain-source voltage rating of 60 V, making it suitable for low power and signal switching applications.

This MOSFET is packaged in a compact 3-pin SOT-23 surface mount package, facilitating space-saving PCB designs commonly used in consumer electronics, automotive electronics, and industrial control circuits. Its enhancement channel mode and a gate voltage range from -20 V to +20 V allow for reliable control and switching performance.

With a maximum drain-source resistance (Rds) of 13.5 Ω and a power dissipation capability of 300 mW, this component is designed to maintain efficiency while minimizing energy loss. The device exhibits a forward voltage of 1.4 V and can operate within a broad temperature range from -55°C up to 150°C, ensuring robustness in demanding environments.

The transistor conforms to the AEC-Q101 automotive standard, affirming its suitability for automotive-grade applications where reliability and safety are paramount. Compact dimensions (length 3 mm, width 1.4 mm, height 1.1 mm) enable convenient use in miniature electronic assemblies.

Enhanced mode NMOS transistor with SOT-23 packaging. Maximum continuous drain current of 115 mA. Maximum drain-source voltage of 60 V. Surface mount 3-pin design for compact integration. Wide operating temperature range from -55°C to 150°C.

Complies with automotive AEC-Q101 standard. Designed for low power electronic and automotive circuits. Forward voltage of 1.4 V and power dissipation of 300 mW.

This DiodesZetex MOSFET is ideal for industrial, automotive, consumer electronics, and embedded systems requiring reliable low-voltage switching components. It supports efficient power management in both manufacturing and commercial electronic assembly projects.

Explore EnvMart's extensive catalog for more Discrete Semiconductors and MOSFETs to find compatible components for your design and manufacturing needs.