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DiodesZetex P-Channel MOSFET 280 mA 60 V Enhancement Mode 3-Pin E-Line ZVP2106A

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DiodesZetex P-Channel MOSFET 280 mA 60 V Enhancement Mode 3-Pin E-Line ZVP2106A

Name: DiodesZetex P-Channel MOSFET 280 mA 60 V Enhancement Mode 3-Pin E-Line ZVP2106A
Brand: DiodesZetex
SKU: 407661
Price: 0.77 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	4.01mm
Length	4.77mm
Model	ZVP2106A
Width	2.41mm
Mount Type	Through Hole
Maximum Operating Temperature	150°C
Package Type	E-Line
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	280mA
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	700mW
Typical Gate Charge Qg @ Vgs	2.2nC
Maximum Gate Source Voltage Vgs	-20, +20V

Key Features

This device features a 3-pin through-hole E-Line package for easy PCB mounting and integration.
It operates in enhancement mode providing reliable switching performance.
The maximum drain-source resistance is 5 Ohms to ensure efficient conduction.
It tolerates gate-source voltages up to ±20 V supporting robust control designs.
Typical gate charge is low at 2.2 nC, enabling fast switching capabilities.
Power dissipation rating of 700 mW suits compact electronic circuits.
Operating temperature range spans from -55°C to 150°C for industrial reliability.
The product meets AEC-Q101 automotive standard ensuring quality and endurance in automotive environments.

Product Description

DiodesZetex ZVP2106A is a P-Channel MOSFET transistor optimized for low power electronic circuit switching and amplifying applications. Featuring an enhancement channel mode, the device supports continuous drain currents up to 280 mA and can withstand drain-source voltages up to 60 V, making it suitable for a wide range of electronic designs requiring efficient low voltage switching.

Housed in a compact 3-pin E-Line through-hole package, this MOSFET facilitates straightforward PCB layout and soldering. Its maximum drain-source resistance of 5 Ohms ensures minimal voltage drop and power loss in the conduction state, enhancing system efficiency.

Designed to operate reliably between temperatures ranging from -55°C to 150°C, this MOSFET is well-suited for industrial, automotive, and consumer electronics requiring durable semiconductor components. The device is compliant with AEC-Q101 automotive standards, affirming its robustness and quality for automotive applications.

With a typical gate charge of 2.2 nC at rated gate voltage and a maximum gate-source voltage of ±20 V, the ZVP2106A enables rapid switching speeds and stable control in signal processing circuits. The maximum power dissipation of 700 mW allows operation in compact circuits without the need for extensive heat sinking.

3-pin E-Line through-hole package supports easy mounting. 280 mA maximum continuous drain current for low power applications. 60 V drain-source voltage rating enables moderate voltage operation. Enhancement mode operation for precise switching behavior.

Low gate charge of 2.2 nC for high switching efficiency. Wide operating temperature range (-55°C to 150°C) for versatile use. Compliance with AEC-Q101 automotive standard ensures reliability.

This MOSFET is ideal for electronic circuit designers working in automotive, industrial controls, consumer electronics, and low power switching circuits. It supports efficient, compact designs where reliable switching, moderate voltage tolerance, and a small form factor are critical.

Explore EnvMart’s electronic components range for compatible parts and advanced semiconductor solutions.