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Vishay P-Channel Enhancement MOSFET, 2 A Continuous Drain Current, 200 V Drain Source Voltage, 27 W Power IRFI9610GPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.8mm |
| Length | 10.63mm |
| Model | IRFI9610GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 27W |
| Typical Gate Charge Qg @ Vgs | 13nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -5.8V |
| P-channel MOSFET,IRFI9610G 2A 200VBrand | Vishay |
Key Features
- This enhancement mode MOSFET features a low on-resistance of 3 ohms.
- Maximum power dissipation is rated at 27 watts for reliable thermal performance.
- It includes a wide operating temperature range from -55°C to 150°C.
- The device supports a maximum gate-source voltage of -20 to +20 volts.
- The package type TO-220 enables through-hole mounting.
- Typical gate charge is 13 nC at the specified gate voltage.
- The device has a compact dimension of 10.63 mm length, 9.8 mm height, and 4.83 mm width.
- It is designed for fast switching and ruggedized industrial applications.
Product Description
Vishay IRFI9610GPBF is a P-Channel enhancement type MOSFET designed to provide efficient switching with a continuous drain current of 2 A and a maximum drain-source voltage of 200 V. Packaged in a 3-pin TO-220 configuration, it is suitable for through-hole mounting in various commercial and industrial electronic applications.
The MOSFET features a maximum power dissipation rating of 27 W, ensuring reliable performance under high thermal stress conditions. Operating temperature ranges from a minimum of -55°C to a maximum of 150°C, making it suitable for harsh environments. The device supports a maximum gate-source voltage range of -20 to +20 V and typical gate charge of 13 nC, enabling fast switching with low losses.
The TO-220 FULLPAK package eliminates the need for additional insulating hardware and provides low thermal resistance between the tab and heatsink, optimizing thermal management. Its compact size with a length of 10.63 mm, height of 9.8 mm, and width of 4.83 mm allows integration into space-constrained designs.
This Vishay MOSFET offers low on-resistance of 3 ohms enhancing efficiency in power applications. It is ruggedized for durability and cost-effective implementation in power management, industrial controls, and electronic equipment.
Low on-resistance of 3 Ω for efficient conduction. High thermal dissipation capability with 27 W power rating. Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage of -20 to +20 V. Compact TO-220 3-pin through-hole package.
Typical gate charge of 13 nC for fast switching. Optimized thermal resistance with FULLPAK design. Designed for rugged industrial and commercial use.
This IRFI9610GPBF MOSFET is ideal for electronic component assemblies, power supplies, and various semiconductor applications within industrial and laboratory environments. Its combination of robust electrical characteristics and practical package design highlights Vishay's commitment to quality semiconductor solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2 A.
It has a maximum drain-source voltage rating of 200 V.
The maximum power dissipation is rated at 27 W, ensuring reliable thermal performance.
The on-resistance of this model is 3 ohms, enhancing efficiency in power applications.
It supports a maximum gate-source voltage range of -20 to +20 V.
The dimensions of the TO-220 package are 10.63 mm in length, 9.8 mm in height, and 4.83 mm in width.
The typical gate charge at the specified gate voltage is 13 nC.
This MOSFET operates within a temperature range of -55°C to 150°C.
It utilizes a through-hole mounting type, suitable for various electronic applications.
It is designed for power management, industrial controls, and electronic equipment applications.
This model has a pin count of 3.
The channel type of this MOSFET is P-channel enhancement mode.
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