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onsemi Transistor PNP 800 mA 60 V 3-Pin TO-92 PN2907ATFR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 20.95mm
Length 5.2mm
Model PN2907ATFR
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 75
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -800mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor features a maximum power dissipation of 625 mW.
  • It has a minimum DC current gain (hFE) of 75 for reliable amplification.
  • Designed for through-hole mount with a small form factor measuring 20.95 mm height.
  • Operating temperature ranges from -55°C to 150°C, allowing stable performance in harsh conditions.
  • The device supports a maximum transition frequency of 100 MHz suitable for high-frequency applications.
  • Its compact TO-92 package ensures ease of integration in various electronic circuits.
  • Maximum collector-base voltage is rated at -60 V and emitter-base voltage at -5 V.
  • Pin count is 3, consistent with standard transistor pinouts for easy referencing.

Product Description

onsemi PN2907ATFR Bipolar Transistor is a high-reliability PNP transistor designed for a wide range of electronic applications including amplification and switching. It supports a maximum DC collector current of 800 mA and can withstand collector-emitter voltages up to 60 V, making it suitable for medium power circuits.

The transistor comes in a 3-pin TO-92 package designed for through-hole mounting, allowing straightforward PCB integration. Its compact dimensions of 20.95 mm height, 5.2 mm length, and 4.19 mm width facilitate installation in tight spaces.

Rated power dissipation is 625 mW, ensuring stable operation under typical loads. The device exhibits a minimum DC current gain (hFE) of 75, which ensures effective signal amplification performance. It supports a maximum transition frequency (ft) of 100 MHz, making it useful for moderate frequency circuits.

Operating temperatures range from -55°C to 150°C, enabling reliable use in industrial, automotive, and consumer electronics that require robust thermal tolerance. The transistor's PNP polarity is ideal for complementary circuit designs.

Maximum DC collector current is 800 mA. Maximum collector-emitter voltage rating is 60 V. Encapsulated in space-saving 3-pin TO-92 package. Minimum DC current gain of 75 for efficient amplification. Maximum power dissipation of 625 mW supports moderate power applications.

Maximum operating temperature of 150°C for harsh environments. Maximum transition frequency of 100 MHz supports moderate frequency performance.

This transistor suits usage in power amplifiers, switches, and general purpose circuits in industrial, consumer electronics, and automotive sectors. Its robust electrical and thermal characteristics ensure reliable long-term operation.

Explore a wide selection of Bipolar Transistors and related semiconductor devices in the Electronics & Electricals category for your industrial and design needs at EnvMart.

onsemi Transistor PNP 800 mA 60 V 3-Pin TO-92 PN2907ATFR
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Frequently Asked Questions

The maximum DC collector current for the PN2907ATFR is 800 mA.

This model has a maximum collector-emitter voltage rating of -60 V.

The dimensions of the TO-92 package are 20.95 mm in height, 5.2 mm in length, and 4.19 mm in width.

The minimum DC current gain (hFE) for the PN2907ATFR is 75.

This transistor features a maximum power dissipation of 625 mW.

The operating temperature range for this transistor is from -55°C to 150°C.

The PN2907ATFR supports a maximum transition frequency of 100 MHz.

This transistor has a pin count of 3, consistent with standard transistor pinouts.

It is designed for through-hole mounting, facilitating straightforward PCB integration.

The maximum emitter-base voltage (VEBO) for the PN2907ATFR is -5 V.

The PN2907ATFR is a PNP transistor, suitable for complementary circuit designs.

The country of origin for this transistor is India.

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