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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 8mm |
| Model | SIJH600E-T1-GE3 |
| Width | 7.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 37A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.01Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 333W |
| Typical Gate Charge Qg @ Vgs | 141nC |
| Maximum Gate Source Voltage Vgs | 20V |
Vishay SIJH600E-T1-GE3 is a TrenchFET® Gen IV power N-Channel MOSFET that operates at a maximum voltage of 60 V and supports a continuous current of up to 37 A. This device is ideal for battery management, motor drive control, and synchronous rectification in industrial, automotive, and power management applications.
This MOSFET features a depletion mode channel with low on-resistance of 0.01 ohms, offering low switching and conduction losses. It is designed for surface mount applications and housed in a 4-pin PowerPAK (8x8L) package that minimizes PCB footprint and optimizes thermal performance, supporting up to 333 W power dissipation.
Operating temperature range of -55°C to 125°C makes it suitable for harsh environments including automotive use, certified to meet AEC-Q101 automotive standards. The maximum gate source voltage rating is 20 V, with a typical gate charge of 141 nC, enabling efficient and fast switching characteristics for power electronics systems.
The MOSFET device is lead-free, compliant with modern environmental requirements, and is UIS tested to ensure robustness. Its compact dimensions of 8 mm length and 7.9 mm width contribute to efficient printed circuit board layouts.
Applications include industrial power supplies, electronic motor controls, battery management systems, and other electronics requiring reliable high current switching in compact form factors. This product helps improve energy efficiency and reliability in high power semiconductor switching roles.
Capable of handling a maximum continuous drain current of 37 A. Operates at a maximum drain source voltage of 60 V. Features a low drain source resistance (Rds) of 0.01 Ω for reduced power loss. Packaged in a compact 4-pin PowerPAK (8x8L) surface mount package.
Supports high power dissipation of up to 333 W, enabling heavy load operation. Operates reliably in temperature ranges from -55°C to 125°C. Typical gate charge of 141 nC at specified gate voltage improves switching performance.
Complies with the automotive standard AEC-Q101 ensuring automotive application suitability.
Discover more power semiconductor components from Vishay in the Electronics & Electricals category at EnvMart, supporting your design and manufacturing needs with quality and reliability.
Explore more products in our Power MOSFET category.
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