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Vishay TrenchFET Gen IV P-Channel MOSFET 30 V, 445 A, 255 W PowerPAK (8x8L) 4-Pin SQJQ130EL-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.6mm |
| Length | 6.15mm |
| Model | SQJQ130EL-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Series | TrenchFET Gen IV |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK (8x8L) |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101 |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 445A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00052Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- The device operates at a maximum drain-source voltage of 30 V with a continuous drain current of 445 A.
- Low on-resistance of 0.00052 ohms ensures minimal conduction losses.
- Supports an enhancement channel mode with a maximum gate-source voltage of 20 V.
- Features a typical gate charge of 43 nC at Vgs.
- Maximum power dissipation of 255 W for robust thermal handling.
- Suitable for surface mount applications, with dimensions 6.15 mm length, 4.9 mm width, and 1.6 mm height.
- Compliance with AEC-Q101 automotive standard and capable of operating between -55°C to 125°C.
- Forward voltage drop rated at 1.1 V supporting efficient switching.
Product Description
Vishay SQJQ130EL-T1_GE3 is a TrenchFET Gen IV type P-Channel MOSFET engineered for demanding power applications requiring high efficiency and reliability. It provides a continuous drain current of 445 A and is rated for 30 V drain-source voltage.
Its package is a compact 4-pin PowerPAK (8x8L), optimized for surface mounting and minimizing thermal resistance. With a very low on-resistance of 0.00052 ohms, it reduces conduction losses during high current operation. This MOSFET features an enhancement channel mode and supports a maximum gate-source voltage of 20 V, ensuring strong switching characteristics.
Designed to operate reliably in harsh environments, the device meets the stringent AEC-Q101 automotive qualification standard, making it suitable for automotive and industrial use cases. The operating temperature range spans from -55°C to 125°C, enabling deployment in various climates and conditions.
The typical gate charge at Vgs is 43 nC, contributing to fast switching and efficient energy use. It exhibits a forward voltage drop of 1.1 V. Power dissipation capability up to 255 W allows robust thermal management under high load.
Dimensions of 6.15 mm length, 4.9 mm width, and 1.6 mm height ensure space-efficient PCB layouts. This MOSFET is ideal for use in automotive electronics, industrial motor controls, power management modules, and other high-performance power switching and amplification applications.
The device operates at a maximum drain-source voltage of 30 V with a continuous drain current of 445 A. Low on-resistance of 0.00052 ohms ensures minimal conduction losses. Supports an enhancement channel mode with a maximum gate-source voltage of 20 V.
Features a typical gate charge of 43 nC at Vgs. Maximum power dissipation of 255 W for robust thermal handling. Suitable for surface mount applications, with dimensions 6.15 mm length, 4.9 mm width, and 1.6 mm height. Compliance with AEC-Q101 automotive standard and capable of operating between -55°C to 125°C.
Forward voltage drop rated at 1.1 V supporting efficient switching.
This Vishay Power MOSFET model SQJQ130EL-T1_GE3 is well-suited for industrial manufacturing, automotive systems, HVAC controls, and other high power-density semiconductor needs. Browse more from the MOSFET and power semiconductor category for compatible components on EnvMart.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 30 V.
This unit has a continuous drain current rating of 445 A.
It features a low on-resistance of 0.00052 ohms, which helps minimize conduction losses.
The maximum power dissipation for this model is 255 W, allowing for robust thermal handling.
It supports a maximum gate-source voltage of 20 V.
The dimensions are 6.15 mm in length, 4.9 mm in width, and 1.6 mm in height.
This MOSFET can operate within a temperature range of -55°C to 125°C.
The typical gate charge at Vgs is 43 nC.
It complies with the AEC-Q101 automotive standard.
This model features a P-channel type.
Yes, it is designed for surface mount applications.
The forward voltage drop is rated at 1.1 V, supporting efficient switching.
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