DiodesZetex N-Channel Enhancement MOSFET 10 A 60 V SO-8 Package DMT616MLSS-13

DiodesZetex DMT616MLSS-13 is a high-performance N-Channel enhancement mode MOSFET designed to deliver efficient power management in industrial and electronic applications. It supports a maximum continuous drain current of 10 amperes and can withstand a maximum drain-source voltage of 60 volts. Packaged in a compact 8-pin SO-8 surface mount package, this device features a low on-state resistance of 21 milliohms, facilitating minimal conduction losses and better thermal performance.

The transistor operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for demanding environments. It has a maximum power dissipation rating of 1.39 watts, and a typical gate charge of 13.6 nanoCoulombs at a gate-source voltage of 20 volts. The forward voltage drop of 1.2 volts ensures efficient switching characteristics.

This MOSFET is an ideal choice for high-efficiency power management circuits found in industrial machinery, power supplies, automotive electronics, and consumer electronic devices. Its low input capacitance and fast switching speeds help in reducing power losses and improving overall device efficiency. The surface mount SO-8 package allows for compact PCB footprint and ease of automated assembly.

Designed for high-efficiency power switching and management applications. Low on-state resistance of 21 milliohms for improved performance. Maximum power dissipation rated at 1.39 watts. Operates reliably from -55°C to 150°C.

Typical gate charge of 13.6 nanoCoulombs at specified gate voltage. Maximum gate-source voltage of 20 volts. Compact dimensions suitable for surface mount technology applications. Forward voltage of 1.2 volts enabling efficient conduction.

DiodesZetex products are quality engineered and designed for diverse industrial, manufacturing, and power electronics applications. Browse our comprehensive selection of semiconductor devices to find compatible components for your design needs.