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Vishay N-Channel MOSFET 100 V, 81 A Continuous Drain Current, Enhancement Mode, SO-8 Package SiDR104ADP-T1-RE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.25mm |
| Model | SiDR104ADP-T1-RE3 |
| Width | 5.15mm |
| Mount Type | Surface |
| Series | SiDR104ADP |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 81A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 6.1mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 100W |
| Typical Gate Charge Qg @ Vgs | 46.1nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- This MOSFET features an enhancement mode channel for efficient switching.
- Offers a low maximum drain-source resistance of 6.1 milliohm for reduced power loss.
- Maximum power dissipation rating of 100 W supports high performance.
- Operates reliably in a wide temperature range from -55°C to 150°C.
- Typical gate charge is 46.1 nC at gate-source voltage, aiding fast switching.
- Maximum gate-source voltage rating is 20 V compatible with standard drive circuits.
- 8-pin SO-8 surface mount package allows easy PCB integration.
Product Description
The Vishay SiDR104ADP-T1-RE3 is a high-performance N-Channel MOSFET designed for power applications requiring efficient switching and high current handling.
This 100 V enhancement mode device supports a continuous drain current up to 81 A, making it suitable for industrial and commercial power electronics, DC-DC converters, motor drives, and power management circuits.
Its low drain-source resistance of 6.1 milliohm minimizes conduction losses, improving overall efficiency and thermal performance. The device exhibits a power dissipation capacity of 100 W, enabling operation under demanding electrical loads.
Designed for surface mounting in an 8-pin SO-8 package, the MOSFET benefits from a compact footprint with dimensions of 6.25 mm length and 5.15 mm width, enabling space-saving PCB layouts.
The operating temperature range from -55°C to 150°C allows reliable performance in harsh industrial and automotive environments. Typical gate charge of 46.1 nC and a maximum gate-source voltage of 20 V facilitate quick switching and compatibility with standard gate drive circuits.
This MOSFET features an enhancement mode N-Channel for effective control of high currents. Maximum continuous drain current is rated at 81 A for robust power handling. Drain-source voltage maximum rating is 100 V, suitable for medium voltage applications.
In SO-8 package format, it provides ease of surface mounting. Maximum power dissipation of 100 W supports high load operation. Wide operating temperature range from -55°C to 150°C ensures durability. Low Rds(on) of 6.1 mΩ reduces conduction losses effectively.
Typical gate charge of 46.1 nC allows fast switching performance. Package dimensions and pin count enable compact PCB designs. This MOSFET is ideal for usage in industrial, automotive, and power management systems requiring efficient high current switching with reliable thermal and electrical performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 81 A.
This MOSFET has a maximum drain-source voltage rating of 100 V.
The low drain-source resistance (Rds(on)) for this unit is 6.1 milliohm, which helps minimize conduction losses.
The typical gate charge for this model is 46.1 nC at the gate-source voltage.
It supports a maximum power dissipation rating of 100 W, allowing for high performance under load.
The operating temperature range is from -55°C to 150°C, ensuring reliable performance in various environments.
This model is packaged in an 8-pin SO-8 surface mount configuration, facilitating easy PCB integration.
The maximum gate-source voltage rating for this MOSFET is 20 V, which is compatible with standard drive circuits.
The dimensions of this unit are 6.25 mm in length and 5.15 mm in width.
It features an enhancement mode N-channel, designed for efficient control of high currents.
This MOSFET is suitable for industrial and commercial power electronics, DC-DC converters, motor drives, and power management circuits.
The country of origin for this MOSFET is India.
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