onsemi PowerTrench Type P-Channel MOSFET, 11 A Current, 20 V Drain Source Voltage, Enhancement Mode, 8-Pin SOIC FDS6576

onsemi FDS6576 PowerTrench Type P-Channel MOSFET is a high-performance semiconductor device designed to provide efficient power switching in various electronic applications. Featuring an enhancement mode channel with a maximum continuous drain current of 11 A and a maximum drain-source voltage of 20 V, it is suitable for low voltage power management.

The device uses onsemi's PowerTrench technology that enhances system efficiency by combining a small gate charge, low reverse recovery charge, and a soft reverse recovery body diode. This ensures fast and smooth switching in synchronous rectification circuits, typical in AC/DC power supplies, resulting in reduced power losses and improved heat management.

The compact 8-pin SOIC surface mount package with dimensions of 5 mm length, 4 mm width, and 1.5 mm height enables easy PCB integration while keeping the system design compact. Operating temperature range from -55°C to 150°C allows it to be used reliably in industrial, automotive, and commercial electronics.

The low maximum drain-source resistance (Rds) of 0.014Ω contributes to minimized conduction losses, improving overall device efficiency. With typical gate charge of 43 nC at Vgs, the MOSFET supports high-frequency switching applications. It also features a forward voltage of 1.2 V and maximum gate-source voltage ratings of -12 V to +12 V ensuring robust gate control. This component complies with RoHS standards, making it environmentally friendly.

onsemi PowerTrench MOSFETs find use in industrial power systems, motor drives, telecommunications, and consumer electronics requiring efficient low voltage power switching. PowerTrench MOSFET technology optimizes system efficiency and power density.

Maximum continuous drain current of 11 Amps ensures robust performance. Maximum drain-source voltage of 20 Volts suitable for low voltage applications. Low maximum drain-source resistance of 0.014 Ohms reduces power losses.

Operating temperature range from -55°C to 150°C enables use in harsh environments. Compact SOIC 8-pin surface mount package measuring 5mm by 4mm by 1.5mm. Typical gate charge of 43 nC facilitates fast switching. Forward voltage of 1.2V and a maximum gate-source voltage of ±12V for reliable operation.

RoHS compliant and free from hazardous substances.

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