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Vishay E Type N-Channel Power MOSFET 17.4 A 800 V Enhancement Mode 3-Pin TO-247AC SIHG21N80AE-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | SIHG21N80AE-GE3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | E |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17.4A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 235mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 179W |
| Typical Gate Charge Qg @ Vgs | 48nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.2V |
Key Features
- Maximum continuous drain current of 17.4 amperes suitable for high load applications.
- High maximum drain source voltage of 800 volts allowing for robust switching.
- Low on-resistance of 235 milliohms reduces conduction losses.
- Enhancement mode channel type ensures effective switching performance.
- Typical gate charge of 48 nanocoulombs balances switching speed and energy consumption.
- High power dissipation capacity of 179 watts supports demanding power operations.
- Wide operating temperature range from -55°C up to 150°C for industrial environments.
- Supplied in through-hole TO-247AC package for reliable mounting and heat dissipation.
Product Description
Vishay SIHG21N80AE-GE3 E Type N-Channel Power MOSFET is a high-voltage switching semiconductor designed for demanding industrial and power-conversion applications. It operates in enhancement mode and can handle a maximum continuous drain current of 17.4 A with a maximum drain source voltage of 800 V. The device is housed in a robust 3-pin TO-247AC through-hole package which facilitates effective heat dissipation and straightforward mounting on PCBs.
Its low on-resistance of 235 milliohms contributes to high efficiency by reducing conduction losses, allowing for improved energy management in power circuits. The MOSFET features a typical total gate charge of 48 nanocoulombs at gate-source voltage, enabling predictable switching behavior and efficient gate drive design.
The device's power dissipation rating of 179 W and a broad operating temperature range from -55°C to 150°C ensure reliable performance in harsh industrial environments. It is RoHS compliant and does not have automotive certification, making it suitable for a variety of standard industrial power electronics applications.
Common uses include high-voltage power supplies, inverter and motor-drive switching stages, hard-switching topologies in power converters, and class-D audio amplifiers requiring high voltage capabilities. The maximum gate-source voltage rating of 30 V guides design parameters to maintain device longevity and performance.
Maximum continuous drain current of 17.4 A. Maximum drain source voltage: 800 V. On-resistance of 235 mΩ for low conduction losses. Enhancement mode channel type for efficient switching. Typical gate charge: 48 nC for predictable switching energy.
Maximum power dissipation at 179 W. Wide operating temperature range: -55°C to 150°C. TO-247AC through-hole package for easy mounting and heat dissipation. Maximum gate-source voltage: 30 V. RoHS compliant device for environmental safety.
This Vishay Power MOSFET model SIHG21N80AE-GE3 is an essential component for engineers designing industrial-grade power electronic systems. Its technical capabilities enable efficient power conversion and control in demanding applications including renewable energy and motor drives. Explore the complete range of power semiconductors and related products on EnvMart for trusted industrial component sourcing.
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Frequently Asked Questions
The maximum continuous drain current of this model is 17.4 A, making it suitable for high load applications.
It has a maximum drain source voltage rating of 800 V, allowing for robust switching capabilities.
The on-resistance is 235 milliohms, which helps reduce conduction losses in power circuits.
The typical gate charge is 48 nanocoulombs, which balances switching speed and energy consumption.
It supports a maximum power dissipation of 179 watts, suitable for demanding power operations.
The operating temperature range is from -55°C to 150°C, making it suitable for industrial environments.
It is supplied in a through-hole TO-247AC package, which facilitates reliable mounting and effective heat dissipation.
The maximum gate-source voltage rating is 30 V, which is important for maintaining device longevity and performance.
This model has 3 pins, which is typical for its TO-247AC package design.
Yes, this device is RoHS compliant, ensuring it meets environmental safety standards.
Common applications include high-voltage power supplies, inverter and motor-drive switching stages, and class-D audio amplifiers.
It uses an enhancement mode channel type, which ensures effective switching performance.
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