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Vishay N-Channel MOSFET PowerPAK SO-8L 410 A Continuous Drain Current 30 V Depletion Channel SQJA26EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Length | 6.15mm |
| Model | SQJA26EP-T1_GE3 |
| Width | 4.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | PowerPAK SO-8L |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 410A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.00128Ω |
| Channel Mode | Depletion |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.1V |
Key Features
- Maximum continuous drain current of 410 A enables high power handling.
- Maximum drain-source voltage of 30 V supports robust operation.
- Low maximum drain-source resistance of 0.00128 ohms ensures efficient conduction.
- Typical gate charge of 43 nC at Vgs maximizes switching performance.
- Maximum power dissipation of 255 W supports thermal endurance.
- Operating temperature range from -55°C to 125°C suits demanding environments.
- Features a 4-pin surface mount PowerPAK SO-8L package for compact PCB layouts.
- Automotive standard AEC-Q101 qualified for reliability in automotive applications.
Product Description
Vishay SQJA26EP-T1_GE3 is a high-performance N-Channel MOSFET featuring a depletion channel mode designed for automotive and industrial applications requiring high power density. It operates at a maximum drain-source voltage of 30 V and supports a continuous drain current of 410 A, making it suitable for high current switching tasks. The device is housed in a PowerPAK SO-8L 4-pin surface mount package, offering compactness and efficient heat dissipation for circuit board layouts.
This MOSFET boasts a maximum power dissipation rating of 255 W, ensuring robust performance under demanding thermal conditions, with an operating temperature range from -55°C to 125°C. The low maximum drain-source resistance of 0.00128 ohms improves energy efficiency by reducing conduction losses during operation. The typical gate charge of 43 nC at the specified gate voltage provides fast switching capabilities, critical for high-frequency applications.
Its maximum gate-source voltage rating of 20 V and forward voltage of 1.1 V contribute to reliable gate control and reduced power losses. The device complies with the automotive grade standard AEC-Q101, guaranteeing durability and reliability in vehicle electronics. Compact physical dimensions (length 6.15 mm, width 4.90 mm) make it an excellent choice for space-constrained applications.
Applications for the Vishay SQJA26EP-T1_GE3 MOSFET span automotive electronics, industrial motor control, power management in communication equipment, and other high power switching systems requiring reliable and efficient semiconductor components. The device is qualified for use in environments with stringent automotive standards and is tested for ruggedness and reliability, including UIS testing.
Maximum continuous drain current of 410 A provides high power handling capacity. Low on-resistance optimizes conduction efficiency. PowerPAK SO-8L package supports surface mount soldering and heat management. Wide operating temperature range from -55°C to 125°C supports harsh operating conditions.
AEC-Q101 automotive qualification ensures quality and reliability. Explore further Power MOSFET products in the Electronics & Electricals category at EnvMart for industrial, automotive, and laboratory applications.
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Frequently Asked Questions
The Vishay SQJA26EP-T1_GE3 has a maximum continuous drain current of 410 A, enabling high power handling capabilities.
This MOSFET operates at a maximum drain-source voltage of 30 V, supporting robust operation in various applications.
The maximum power dissipation for this unit is rated at 255 W, which supports thermal endurance under demanding conditions.
The dimensions of the PowerPAK SO-8L package are 6.15 mm in length and 4.90 mm in width, making it suitable for compact PCB layouts.
It operates within a temperature range of -55°C to 125°C, making it suitable for demanding environments.
The typical gate charge for this model at the specified gate voltage is 43 nC, which maximizes its switching performance.
The maximum gate-source voltage rating for this MOSFET is 20 V, ensuring reliable gate control.
This MOSFET is suitable for automotive electronics, industrial motor control, and power management in communication equipment, among other high power switching systems.
The maximum drain-source resistance is 0.00128 ohms, which helps optimize conduction efficiency.
Yes, it is AEC-Q101 qualified, ensuring reliability and durability in automotive applications.
The Vishay SQJA26EP-T1_GE3 has a pin count of 4, suitable for surface mount applications.
This model features an N-channel depletion type, designed for high power density applications.
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