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DiodesZetex DMP Type P-Channel MOSFET, 600mA Continuous Drain Current, 450V Drain Source Voltage, 12.5W Power DMP45H21DHE-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.65mm |
| Length | 6.55mm |
| Model | DMP45H21DHE-13 |
| Width | 3.55mm |
| Mount Type | Surface |
| Series | DMP |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 600mA |
| Maximum Drain Source Voltage Vds | 450V |
| Maximum Drain Source Resistance Rds | 21mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 12.5W |
| Typical Gate Charge Qg @ Vgs | 4.2nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET is an enhancement mode device suitable for high voltage switching applications.
- Maximum continuous drain current is 600mA, optimized for efficient power handling.
- Offers a maximum power dissipation of 12.5W for reliable operation under load.
- Features a low maximum drain-source resistance of 21mΩ for minimal power loss.
- Equipped with a typical gate charge of 4.2nC at specified gate-source voltage for fast switching.
- Operates reliably across a wide temperature range from -55°C to 150°C.
- Designed with a surface mount package, allowing compact PCB layout and ease of assembly.
- Lead-free construction complies with environmental standards, halogen and antimony free.
Product Description
DiodesZetex model DMP45H21DHE-13 is a Type P-Channel MOSFET designed for efficient and reliable power switching. This enhancement mode device offers a maximum continuous drain current of 600mA and can withstand a maximum drain-source voltage of 450V, making it ideal for telecom and other high voltage switching circuits.
The device comes in a compact 4-pin SOT-223 surface mount package with dimensions of 6.55mm length, 3.55mm width, and 1.65mm height, suitable for space-constrained electronics designs. It ensures low power dissipation up to 12.5W, reducing heat and improving system reliability.
With a low 21mΩ maximum drain-source on-resistance, the MOSFET minimizes conduction losses, enhancing energy efficiency. Typical gate charge is 4.2nC @ gate-source voltage, enabling fast switching performance. It is rated to operate in a broad temperature range from -55°C to 150°C, providing robustness in demanding environmental conditions.
This device is built with high impedance and is free from thermal runaway and thermally induced secondary breakdown, ensuring operational safety and reliability. The lead-free, halogen and antimony-free 'green' device construction complies with modern environmental regulations.
Applications benefiting from this MOSFET include power load switching, uninterrupted power supplies, and general purpose high voltage switching in telecom and industrial sectors. This MOSFET provides a reliable, thermally stable solution for high voltage switching applications.
4-pin SOT-223 surface mount package allows for easy PCB integration. Efficient power handling with 600mA continuous drain current and 12.5W maximum power dissipation. Wide operating temperature range from -55°C to 150°C suits industrial environments.
Environmentally friendly lead-free and halogen-free construction. Explore more MOSFET components at EnvMart for various electronic and power management needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 600mA.
It can withstand a maximum drain-source voltage of 450V.
This MOSFET has a maximum power dissipation of 12.5W.
The dimensions of the SOT-223 package are 6.55mm in length, 3.55mm in width, and 1.65mm in height.
The typical gate charge is 4.2nC at the specified gate-source voltage.
It features a maximum drain-source resistance of 21mΩ.
This MOSFET operates reliably across a wide temperature range from -55°C to 150°C.
It is constructed in a lead-free, halogen-free, and antimony-free format, complying with environmental standards.
This model is a Type P-Channel MOSFET.
It is suitable for high voltage switching applications, including power load switching and uninterrupted power supplies.
This device has a pin count of 4.
The maximum gate-source voltage is 30V.
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