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DiodesZetex Dual DMT 2 N-Channel MOSFET, 7.6 A Continuous Drain Current, 60 V Maximum Drain-Source Voltage DMTH6016LSD-13
Specifications
| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMTH6016LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Series | DMT |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.6A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Dual |
Key Features
- The transistor configuration is dual N-channel enhancing the efficiency of switching operations.
- This MOSFET features a low maximum drain-source resistance of 28 mΩ for improved conductivity.
- Thermal performance supports a maximum operating temperature of 175°C and power dissipation of 1.4 W.
- Compact physical dimensions with height 1.5 mm, length 4.95 mm, and width 3.95 mm.
- Gate charge is low at 8.4 nC typical, enabling faster switching speeds.
- Designed for surface mount applications with an 8-pin SOIC package.
- Automotive standard AEC-Q101 qualified ensuring reliability for automotive electronics.
Product Description
DiodesZetex DMTH6016LSD-13 Dual DMT 2 N-Channel MOSFET is a compact and efficient semiconductor device designed for high-performance switching applications in electronic circuits. Featuring a maximum continuous drain current of 7.6 A and a maximum drain-source voltage of 60 V, this dual transistor is suitable for demanding industrial, automotive, and general electronic uses.
The MOSFET is housed in a small footprint 8-pin SOIC package, allowing easy integration onto printed circuit boards for surface mount technology assembly. With a low on-state resistance of 28 mΩ, the device ensures minimal power loss during operation, enhancing energy efficiency.
The device supports a maximum operating temperature of up to 175°C and a power dissipation rating of 1.4 W, making it robust for high-temperature environments. Its enhancement mode channel and typical low gate charge of 8.4 nC support rapid switching, ideal for power management and signal amplification purposes.
Physical dimensions - height of 1.5 mm, length of 4.95 mm, and width of 3.95 mm - make this MOSFET suitable for compact electronic designs. Compliance with the AEC-Q101 automotive standard underscores its reliability in automotive electronics and other critical system applications.
Dual N-channel enhancement mode MOSFET configuration. Maximum continuous drain current 7.6 A and drain-source voltage 60 V. Low Rds(on) of 28 mΩ for efficient conduction. Maximum operating temperature 175°C with 1.4 W power dissipation.
Typical gate charge of 8.4 nC for fast switching. 8-pin SOIC package designed for surface mounting. AEC-Q101 certified for automotive reliability.
This MOSFET model DMTH6016LSD-13 by DiodesZetex is ideal for applications in industrial power management, automotive electronics, and consumer electronics needing reliable, compact, and efficient transistor performance.
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Frequently Asked Questions
The maximum continuous drain current of this model is 7.6 A.
This MOSFET has a maximum drain-source voltage of 60 V.
The maximum drain-source resistance (Rds(on)) is 28 mΩ, which improves conductivity during operation.
The dimensions of this unit are height 1.5 mm, length 4.95 mm, and width 3.95 mm.
The typical gate charge is 8.4 nC, enabling faster switching speeds.
The maximum operating temperature is 175°C.
It is housed in an 8-pin SOIC package designed for surface mounting.
Yes, it is AEC-Q101 qualified, ensuring reliability for automotive electronics.
The minimum operating temperature is -55°C.
This model features 2 elements per chip.
The maximum power dissipation rating is 1.4 W.
This MOSFET has a dual N-channel enhancement mode configuration.
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