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DiodesZetex DMP Type P-Channel MOSFET, 20 V, -5.5 A, Enhancement Mode, 6-Pin DFN Package DMP2035UFDF-7

Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin India
Brand DiodesZetex
Height 600μm
Length 2mm
Model DMP2035UFDF-7
Width 2mm
Mount Type Surface
Series DMP
Maximum Operating Temperature 150°C
Package Type DFN
Minimum Operating Temperature -55°C
Pin Count 6
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id -5.5A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 120mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.03W
Typical Gate Charge Qg @ Vgs 20.5nC
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf -1.2V

Key Features

  • Supports a maximum continuous drain current of -5.5 amperes for high current applications.
  • Operates with a maximum drain-source voltage rating of 20 volts.
  • Features a low maximum drain-source resistance of 120 milliohms ensuring efficient conduction.
  • Equipped with a 6-pin DFN surface mount package ideal for compact electronics.
  • Designed to operate across a temperature range from -55°C to 150°C, suitable for demanding environments.
  • Typical gate charge of 20.5 nanocoulombs for fast switching performance.
  • Maximum gate-source voltage rating of 8 volts to protect against voltage spikes.
  • Adheres to the automotive standard AEC-Q101 ensuring automotive grade reliability.

Product Description

DiodesZetex DMP2035UFDF-7 P-Channel MOSFET is a semiconductor device designed to switch or amplify electronic signals in various applications including power management and automotive electronics. Featuring a robust 6-pin DFN surface mount package, this MOSFET supports a maximum continuous drain current of -5.5 A and a drain-source voltage up to 20 V, making it suitable for medium power circuits.

This enhancement-mode transistor offers low on-resistance (120 milliohms) which improves efficiency by minimizing power losses during conduction. With an operating temperature range from -55°C to 150°C, it reliably functions in harsh environments such as automotive and industrial settings.

The device has a typical gate charge of 20.5 nC at a gate-source voltage of 20 V, enabling swift switching capabilities essential for high frequency and PWM applications. Protection is provided by a maximum gate-source voltage rating of 8 V. It conforms to the automotive standard AEC-Q101, underscoring its suitability for automotive system integration.

Its compact dimensions, 2 mm by 2 mm with a thickness of 600 micrometers, fit well into space-constrained PCB layouts while maintaining durability and electrical performance. The DFN package's surface mount design facilitates automated assembly, enhancing production efficiency.

Supports a maximum continuous drain current of -5.5 amperes for high current applications. Operates with a maximum drain-source voltage rating of 20 volts. Features a low maximum drain-source resistance of 120 milliohms ensuring efficient conduction.

Equipped with a 6-pin DFN surface mount package ideal for compact electronics. Designed to operate across a temperature range from -55°C to 150°C, suitable for demanding environments. Typical gate charge of 20.5 nanocoulombs for fast switching performance.

Maximum gate-source voltage rating of 8 volts to protect against voltage spikes. Adheres to the automotive standard AEC-Q101 ensuring automotive grade reliability.

This P-Channel MOSFET is widely applied in automotive electronics, industrial power controls, and general-purpose switching circuits. Its surface mount form factor suits high-volume manufacturing environments and modern PCB designs.

Explore more DiodesZetex MOSFETs and other semiconductor components on EnvMart for reliable and efficient electronic design solutions.

DiodesZetex DMP Type P-Channel MOSFET, 20 V, -5.5 A, Enhancement Mode, 6-Pin DFN Package DMP2035UFDF-7
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Frequently Asked Questions

The DMP2035UFDF-7 supports a maximum continuous drain current of -5.5 amperes.

This model operates with a maximum drain-source voltage rating of 20 volts.

It features a low maximum drain-source resistance of 120 milliohms, ensuring efficient conduction.

The device is designed to operate across a temperature range from -55°C to 150°C, suitable for demanding environments.

The typical gate charge is 20.5 nanocoulombs, enabling fast switching performance.

It has a maximum gate-source voltage rating of 8 volts to protect against voltage spikes.

This model is equipped with a 6-pin DFN surface mount package, ideal for compact electronics.

The dimensions of the DMP2035UFDF-7 are 2 mm in length and width, with a height of 600 micrometers.

It adheres to the automotive standard AEC-Q101, ensuring automotive grade reliability.

The maximum power dissipation for the DMP2035UFDF-7 is 2.03 watts.

This P-Channel MOSFET is widely applied in automotive electronics, industrial power controls, and general-purpose switching circuits.

The channel mode of the DMP2035UFDF-7 is enhancement, which is typical for this type of transistor.

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