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onsemi P-Channel MOSFET 20 A, 60 V Enhancement Mode, 8-Pin WDFN Package NTTFS5116PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 750μm |
| Length | 3.15mm |
| Model | NTTFS5116PL |
| Width | 3.15mm |
| Mount Type | Surface |
| Series | NTTFS5116PL |
| Maximum Operating Temperature | 175°C |
| Package Type | WDFN |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 72mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This device is designed with enhancement mode channel operation.
- It supports a maximum drain current of 20 amperes for continuous operation.
- The maximum drain-source voltage rating is 60 volts ensuring robust performance.
- The MOSFET has a low maximum drain-source resistance of 72 milliohms for efficient conduction.
- Maximum power dissipation is rated at 40 watts to handle significant loads.
- It operates within a temperature range from -55 to 175 degrees Celsius.
- The typical gate charge at Vgs is 25 nanocoulombs for faster switching.
- Gate-source voltage limits are -20 to +20 volts for reliable control.
Product Description
onsemi's NTTFS5116PL is a high-performance P-Channel Power MOSFET designed for industrial, electronic, and power management applications. This semiconductor device provides robust operation with a maximum continuous drain current of 20 amperes and can tolerate drain-source voltages up to 60 volts, making it suitable for various switching and amplification needs.
The device is built with enhancement mode channel technology, offering efficient control and low conduction losses thanks to its maximum drain-source resistance of only 72 milliohms. It is packaged in a compact 8-pin WDFN surface mount footprint, measuring 3.15 mm by 3.15 mm with a height of 750 micrometers, ideal for space-constrained electronic circuits.
This MOSFET delivers reliable performance across a wide operating temperature range from -55°C to 175°C, supporting demanding industrial and automotive environments. Its typical gate charge of 25 nC at gate-source voltage ensures rapid switching operations while maintaining control stability, with a gate-source voltage tolerance from -20 to +20 volts.
Applications for this onsemi NTTFS5116PL Power MOSFET span industrial control systems, power conversion circuits, and electronic devices requiring efficient switching elements. The surface mount package enhances assembly efficiency and thermal management in printed circuit board designs.
This device is designed with enhancement mode channel operation. It supports a maximum drain current of 20 amperes for continuous operation. The maximum drain-source voltage rating is 60 volts ensuring robust performance.
The MOSFET has a low maximum drain-source resistance of 72 milliohms for efficient conduction. Maximum power dissipation is rated at 40 watts to handle significant loads. It operates within a temperature range from -55 to 175 degrees Celsius.
The typical gate charge at Vgs is 25 nanocoulombs for faster switching. Gate-source voltage limits are -20 to +20 volts for reliable control. The compact WDFN package measures 3.15 mm in length, 3.15 mm width, and 750 micrometers in height.
Its surface mount design optimizes PCB space usage and heat dissipation. Explore more power semiconductors and related components from leading brands like onsemi here at EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes.
This device has a maximum drain-source voltage rating of 60 volts.
The maximum power dissipation rated for this MOSFET is 40 watts.
The typical gate charge at gate-source voltage (Vgs) is 25 nanocoulombs.
It has a low maximum drain-source resistance of 72 milliohms, which helps in efficient conduction.
The WDFN package measures 3.15 mm in length, 3.15 mm in width, and has a height of 750 micrometers.
This model operates within a temperature range from -55°C to 175°C.
The gate-source voltage limits for this device are -20 to +20 volts.
This MOSFET utilizes an enhancement mode P-channel type.
The NTTFS5116PL features an 8-pin configuration.
This device is suitable for industrial control systems, power conversion circuits, and electronic devices requiring efficient switching elements.
The country of origin for this MOSFET is India.
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