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onsemi PowerTrench N-Channel MOSFET, 15 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SOIC Package FDS8896
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS8896 |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 50nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Features the PowerTrench series for efficient switching performance.
- Low maximum drain source resistance of 6 mΩ for reduced power loss.
- Supports enhancement mode channel operation with N-type channel type.
- Maximum gate source voltage rating of -20 V to +20 V to ensure device safety.
- Capable of dissipating up to 2.5 W of power in operation.
- Wide operating temperature range from -55°C to 150°C suitable for industrial use.
- Compact dimensions with length 5 mm, width 4 mm, and height 1.5 mm.
- Designed for surface mount technology with an 8-pin SOIC package type.
Product Description
onsemi FDS8896 PowerTrench N-Channel MOSFET offers a high-performance solution for electronic applications requiring efficient switching and low power dissipation. This discrete semiconductor device supports a continuous drain current of 15 A and a maximum drain source voltage of 30 V, making it suitable for medium power circuits.
Constructed within an 8-pin SOIC surface mount package, the FDS8896 features a low maximum drain source resistance of 6 milliohms, significantly reducing conduction losses and improving overall circuit efficiency. The device operates in enhancement mode with an N-type channel, providing reliable switching characteristics for various electronic component applications.
Engineered for robust industrial and commercial usage, the MOSFET supports a broad operating temperature range from -55°C to 150°C, ensuring durability in harsh environments. Its typical gate charge of 50 nC at rated gate voltage promotes rapid switching and reduced gate drive losses, beneficial for power management and switching power supply systems.
This MOSFET is ideal for use in power supply circuits, motor control, relay drivers, and load switching in electronic devices. The compact size of 5 mm length, 4 mm width, and 1.5 mm height facilitates circuit board layout optimization in space-constrained designs.
PowerTrench series device for optimized efficiency and thermal management. N-channel enhancement mode operation ensuring fast switching. Surface mount SOIC package ideal for automated assembly. Wide temperature operation supports industrial and automotive applications.
Robust electrical characteristics for reliable performance. Low gate charge enhances switching speed and efficiency. Suitable for a wide range of power management and control applications.
For those seeking dependable high-quality MOSFET components for industrial electronics, onsemi offers this model as a practical choice. Explore EnvMart’s catalog for more semiconductor devices and power management solutions from trusted brands.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15 A.
It can handle a maximum drain source voltage of 30 V.
This MOSFET is housed in an 8-pin SOIC package.
The maximum power dissipation rating is 2.5 W.
The maximum drain source resistance is 6 mΩ.
It operates within a temperature range of -55°C to 150°C.
This model uses an N-channel type with enhancement mode operation.
The typical gate charge at rated gate voltage is 50 nC.
The dimensions are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The maximum gate source voltage rating is -20 V to +20 V.
The country of origin for this product is India.
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