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Vishay P-Channel MOSFET, 55 A, 60 V, Enhancement Mode, 3-Pin TO-263 SUM55P06-19L-E3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.41mm |
| Model | SUM55P06-19L-E3 |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | SUM55P06-19L |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 55A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 19mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.75W |
| Typical Gate Charge Qg @ Vgs | 76nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.5V |
Key Features
- This device uses the TO-263 package for surface mount applications.
- It features a maximum drain-source resistance of 19 milliohms for efficient conduction.
- It supports a maximum power dissipation of 3.75 watts ensuring reliable operation.
- Operating temperature range spans from -55°C to 175°C for industrial use.
- The typical gate charge at Vgs is 76 nanocoulombs for optimized switching.
- This MOSFET has a maximum gate-source voltage of -20 V to +20 V.
- The forward voltage drop is rated at -1.5 volts.
- It is designed without specific automotive standards or approvals.
Product Description
Vishay SUM55P06-19L-E3 is a P-channel enhancement mode MOSFET designed for high-performance electronic applications requiring a continuous drain current of 55 A and a maximum drain-source voltage of 60 V. Packaged in a compact and surface-mount TO-263 3-pin format, it provides efficient power handling in a durable form factor.
This MOSFET is optimized for industrial, automotive (non-certified), and consumer electronics where reliable switching and load management are critical. It supports extended temperature operation from -55°C up to 175°C, making it suitable for harsh environments.
The device features a low maximum drain-source resistance of 19 milliohms, minimizing conduction losses and improving system efficiency. Its typical gate charge of 76 nC facilitates fast switching speeds while maintaining gate drive efficiency.
Designed to operate safely within a gate-source voltage range of -20 V to +20 V, this product ensures robustness against voltage spikes. The maximum power dissipation of 3.75 W balances thermal management for operation in dense electronic designs.
Physical dimensions of 10.41 mm length, 9.65 mm width, and 4.83 mm height assist in PCB layout and space-constrained designs. Despite lacking formal automotive certification, it meets industrial-grade demands for durability and performance.
This P-channel MOSFET is ideal for power switching and amplification in industrial and commercial equipment. Its surface-mount TO-263 package offers space-saving integration with excellent thermal characteristics. High maximum continuous drain current and low Rds(on) contribute to energy-efficient designs.
Wide temperature tolerance supports applications requiring reliable performance under varied conditions. Optimized gate charge enhances switching performance for power management circuits. Explore similar MOSFETs and related discrete semiconductors at EnvMart for your electronics and electrical device needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 55 A.
It supports a maximum drain-source voltage of 60 V.
The typical gate charge at Vgs is 76 nanocoulombs (nC).
The maximum power dissipation for this unit is 3.75 watts.
The dimensions of the TO-263 package are 10.41 mm in length, 9.65 mm in width, and 4.83 mm in height.
It operates within a temperature range of -55°C to 175°C.
The maximum drain-source resistance is rated at 19 milliohms.
The maximum gate-source voltage is -20 V to +20 V.
This MOSFET uses a surface mount type for installation.
The forward voltage drop is rated at -1.5 volts.
It features a P-channel type.
This model is designed for automotive applications but does not have specific automotive standards or approvals.
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