STMicroelectronics N-Channel MDmesh SuperMESH MOSFET, 17.5 A, 950 V, Enhancement Mode, TO-220, 3-Pin STP20N95K5

STMicroelectronics STP20N95K5 is an N-Channel MDmesh SuperMESH MOSFET designed for industrial and electronic applications requiring high voltage and current handling capabilities. This enhancement mode device is packaged in a 3-pin TO-220 through-hole format, which facilitates easy mounting and thermal management.

This MOSFET features a maximum continuous drain current (Id) of 17.5 amperes and a maximum drain-source voltage (Vds) of 950 volts, making it suitable for power switching, motor control, and power supply applications. With a low on-resistance of 330 milliohms and maximum power dissipation of 250 watts, the device ensures efficient conduction with minimal heat generation.

The device supports fast switching with a typical gate charge (Qg) of 40 nanocoulombs, suitable for high-frequency operations. It operates reliably within a wide temperature range of -55°C to 150°C, providing durability in harsh industrial conditions.

The robust gate-source voltage rating of ±30 volts protects the gate from voltage spikes, while the forward voltage drop of 1.5 volts enhances overall device efficiency. The physical dimensions of height 15.75 mm, length 10.4 mm, and width 4.6 mm aid in proper footprint and heat dissipation on PCB layouts.

This MOSFET is commonly used in industrial electronic circuits, power management systems, HVAC controls, and manufacturing equipment that demand high power switching capabilities. It is also ideal for use in laboratory power test setups and automotive electronics not requiring automotive certification.

The STP20N95K5 is manufactured in China and is supplied new. It does not have specific certifications or automotive standards reported. Maximum continuous drain current of 17.5 amperes suitable for high current applications.

Maximum drain-source voltage rating of 950 volts enabling high voltage operations. Low on-resistance of 330 milliohms reduces power losses. Maximum power dissipation of 250 watts allows for reliable thermal handling. Gate charge of 40 nanocoulombs supports fast switching performance.

Wide operating temperature range from -55°C up to 150°C supports diverse environments. Through hole mount with TO-220 package type for easy PCB integration. Package dimensions: height 15.75 mm, length 10.4 mm, width 4.6 mm.

Maximum gate-source voltage of ±30 volts ensures robust gate control. Forward voltage drop of 1.5 volts optimizes conduction efficiency. Explore the Electronics & Electricals category at EnvMart for more MOSFETs and discrete semiconductor products by STMicroelectronics and other leading brands.