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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1mm |
| Length | 2.9mm |
| Model | BSS806NEH6327XTSA1 |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | OptiMOS 2 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 1.7nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 820mV |
Infineon OptiMOS 2 N-Channel MOSFET model BSS806NEH6327XTSA1 is a small-signal enhancement mode device designed for surface mounting in compact electronic circuits. It operates at a maximum continuous drain current of 2.3 A and a drain-source voltage rating of 20 V, making it appropriate for low-voltage power switching applications. The device is housed in a compact SOT-23 package with three pins, ideal for saving board space and simplifying automated placement.
This MOSFET features a low maximum drain-source resistance of 82 milliohms that minimizes conduction losses and thermal buildup during operation. The gate charge is approximately 1.7 nanocoulombs, allowing for rapid switching performance with minimal gate drive requirements. It can endure gate-source voltages from -8 V to +8 V, providing flexibility in drive circuitry design.
Its operating temperature range spans from -55°C to 150°C, enabling reliable function in automotive and industrial environments with significant temperature variations. The absolute maximum power dissipation is 500 milliwatts, which aids in maintaining device integrity under continuous current loads.
Low conduction loss supports energy efficiency in power stages. SOT-23 surface mount package supports space-saving PCB design. Wide operating temperature enables use in automotive and industrial systems. Compliance with AEC-Q101 automotive standard ensures enhanced durability.
Fast switching enabled by low gate charge and optimized gate voltage tolerance.
This device is commonly used in battery management systems, power distribution modules, DC-DC converters, and load switching applications in automotive and embedded systems. Its compact footprint and electrical characteristics make it an excellent choice for efficient power control in modern electronics.
Explore more high-quality semiconductor components and MOSFET devices at EnvMart for industrial and automotive electronics projects.
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