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onsemi P-Channel MOSFET 20 V 8.4 A Surface Mount SOT-223 3-Pin Enhancement Mode NVF6P02T3G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.65mm |
| Length | 6.7mm |
| Model | NVF6P02T3G |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | NVF6P02 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 8.3W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
Key Features
- 3-pin surface mount package offers reliable board mounting.
- Low maximum drain-source resistance of 70 milliohms ensures efficient switching.
- Maximum power dissipation of 8.3 W for stable operation.
- Wide operating temperature range from -55°C to 150°C suits demanding environments.
- Typical gate charge of 15 nC supports fast switching applications.
- Forward voltage up to -1.2 V ensures low conduction losses.
- Compliant with AEC-Q101 automotive standard for enhanced reliability.
Product Description
onsemi NVF6P02T3G is a high-performance P-Channel power MOSFET designed for efficient switching in electronic circuits. It supports a maximum continuous drain current of 8.4 A and withstands a drain-source voltage up to 20 V. Packaged in a compact SOT-223 surface mount configuration with 3 pins, this MOSFET enables dense PCB layouts and reliable soldering.
Its low on-resistance (Rds) of 70 milliohms contributes to minimal power losses and thermal buildup during operation. The device can dissipate up to 8.3 watts of power, making it suitable for moderate power applications across industrial and automotive electronics.
The NVF6P02T3G features an enhancement mode channel and typical gate charge of 15 nC at a gate-source voltage of 15 V, enabling swift switching performance critical in PWM and motor control circuits.
Its operational temperature range from -55°C to 150°C ensures durability under harsh environmental conditions, including automotive applications for which it meets the AEC-Q101 standard. The forward voltage drop peaks at -1.2 V, keeping conduction losses low and improving energy efficiency.
The dimensions (6.7 mm length, 3.7 mm width, and 1.65 mm height) make it suitable for compact electronic designs where space constraints are significant. 3-pin SOT-223 surface mount package. Low Rds(on) of 70 milliohms for enhanced efficiency.
Power dissipation rating of 8.3 W. Wide temperature range (-55°C to 150°C) for reliable performance. Typical gate charge of 15 nC for fast switching. Compliant with AEC-Q101 automotive standard.
This MOSFET is ideal for electronic component assemblies in industrial control systems, automotive electronics, and power management circuits. For further components and technical resources, browse the MOSFET category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.4 A.
This MOSFET can withstand a maximum drain-source voltage of 20 V.
The typical gate charge at a gate-source voltage of 15 V is 15 nC.
It has a maximum power dissipation rating of 8.3 W.
The dimensions of the SOT-223 package are 6.7 mm in length, 3.7 mm in width, and 1.65 mm in height.
The operating temperature range is from -55°C to 150°C.
The maximum drain-source resistance (Rds) is 70 milliohms.
Yes, it is compliant with the AEC-Q101 automotive standard.
This model features an enhancement mode P-channel.
The forward voltage drop peaks at -1.2 V.
The SOT-223 package has a pin count of 3.
It is designed for surface mounting.
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