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| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.5mm |
| Length | 4.6mm |
| Model | PBSS4250X,115 |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | PBSS4250X |
| Maximum Operating Temperature | 150°C |
| Package Type | UPAK |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 50V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
| onsemi 2SC5994-TD-E Transistor, 2 A NPN, 50 V, 3-Pin PCPBrand | onsemi |
Nexperia PBSS4250X,115 is a low saturation voltage NPN bipolar junction transistor designed for surface-mount applications in compact 4-pin UPAK packaging. It supports a maximum DC collector current of 2 amperes and a maximum collector-emitter voltage of 50 volts, making it suitable for switching and amplification tasks in electronic circuits.
This transistor features a minimum DC current gain (hFE) of 150, enabling strong signal amplification, and a maximum power dissipation capability of 1 watt, ensuring efficient thermal management during operation.
Its wide operating temperature range from -65°C to 150°C allows reliable usage in harsh industrial and automotive environments. The maximum transition frequency of 100 MHz makes it ideal for high-frequency switching applications.
Nexperia's PBSS4250X,115 complies with RoHS standards and automotive standard AEC-Q101, underscoring its quality for automotive electronic systems. Its low saturation voltage reduces power loss and heat generation, increasing overall circuit efficiency.
This transistor is packaged in a compact 4-pin UPAK surface-mount package suitable for automated PCB assembly. Typical applications include automotive electronics, industrial controls, and power management in electronic devices.
Designed for high reliability in digital and switching circuits requiring moderate power handling. Offers enhanced efficiency with reduced switching losses compared to conventional transistors. Robust electrical parameters support diverse industrial and laboratory use cases.
Ideal for circuits needing a durable and efficient NPN transistor for high-speed switching and amplification. The combination of low voltage saturation and high current capacity makes it a versatile component in semiconductor discrete devices.
Explore the wide range of Bipolar Transistors and other semiconductor components available in the Electronics & Electricals category at EnvMart.
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