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onsemi UniFET Type P-Channel MOSFET, 460 mA, 25 V Enhancement Mode, 3-Pin SOT-23 FDV304P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 930μm |
| Length | 2.92mm |
| Model | FDV304P |
| Width | 1.3mm |
| Mount Type | Surface |
| Series | UniFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 460mA |
| Maximum Drain Source Voltage Vds | 25V |
| Maximum Drain Source Resistance Rds | 1.1Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 350mW |
| Typical Gate Charge Qg @ Vgs | 1.1nC |
| Maximum Gate Source Voltage Vgs | 8V |
| Forward Voltage Vf | -1.2V |
Key Features
- High-density DMOS technology reduces on-state resistance for rugged and reliable switching.
- Surface mount package in 3-pin SOT-23 form factor for compact assembly.
- Maximum power dissipation of 350 mW supports moderate power applications.
- Operating temperature range from -55°C to 150°C suits diverse industrial environments.
- Typical gate charge of 1.1 nC enhances high-speed switching performance.
- Maximum gate-source voltage of 8 V protects against overvoltage scenarios.
- Applications include DC/DC converters, battery protection circuits, power management control, and DC motor control.
Product Description
onsemi FDV304P UniFET Type P-Channel MOSFET is a reliable enhancement mode device designed using proprietary high cell density DMOS technology. It offers a maximum continuous drain current of 460 mA and a drain-source voltage of 25 V, making it suitable for efficient load switching in compact electronic circuits.
The device comes in a 3-pin SOT-23 surface mount package, optimizing board space and facilitating easy integration. Its high saturation current and low on-resistance deliver superior switching characteristics that ensure rugged performance even under demanding industrial conditions.
Operating across a broad temperature range from -55°C to 150°C, the FDV304P is well-suited for applications in automotive, industrial, and consumer electronics environments. Voltage-controlled P-Channel small signal switch ensures efficient load switching.
High-density DMOS chip minimizes on-state resistance for energy-efficient operation. Compact 3-pin SOT-23 package supports surface mounting and automated assembly. Max power dissipation rated at 350 mW accommodates moderate load currents reliably.
Wide operating temperature range enables use in harsh environmental conditions. Low gate charge enables fast switching for dynamic power management applications. Max gate-source voltage protects from voltage spikes in industrial circuits.
Typical applications include load switching, DC/DC converters, battery protection, power management, and DC motor control.
This MOSFET transistor is ideal for designers looking to implement efficient power switching solutions in industrial, automotive, and consumer electronic systems. It benefits from onsemi's DMOS technology to provide enhanced durability and reliable operation.
Explore EnvMart's extensive selection of MOSFETs and discrete semiconductors for your electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 460 mA.
The maximum drain-source voltage is 25 V.
It comes in a 3-pin SOT-23 surface mount package.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 1.1 nC.
The maximum power dissipation is rated at 350 mW.
The maximum gate-source voltage is 8 V.
The dimensions are 2.92 mm in length, 1.3 mm in width, and 930 μm in height.
This model utilizes a Type P channel.
It is suitable for applications such as load switching, DC/DC converters, battery protection, power management, and DC motor control.
It is designed using proprietary high cell density DMOS technology, which minimizes on-state resistance.
It delivers superior switching characteristics with high saturation current and low on-resistance, ensuring rugged performance.
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