$1.11
$1.08
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay TrenchFET Type P-Channel MOSFET, 50 A, 20 V Enhancement Mode, SO-8 Package SIR401DP-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 6.25mm |
| Model | SIR401DP-T1-GE3 |
| Width | 5.26mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 7.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 39W |
| Typical Gate Charge Qg @ Vgs | 205nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.1V |
Key Features
- Maximum continuous drain current of 50 A for robust power handling.
- Maximum drain-source voltage of 20 V ensuring suitability in low voltage circuits.
- Enhanced TrenchFET technology offers low Rds(on) of 7.7 mOhm to minimize conduction losses.
- Compact SO-8 surface mount package with 8 pins facilitating efficient PCB design.
- Low typical gate charge of 205 nC enabling fast switching and reduced power dissipation.
- Wide operating temperature range from -55°C to 150°C for reliable performance in harsh environments.
- Maximum power dissipation of 39 W for thermal endurance.
- Maximum gate-source voltage of ±12 V provides robust gate drive tolerance.
Product Description
Vishay SIR401DP-T1-GE3 is a high-performance P-Channel MOSFET utilizing advanced TrenchFET Gen III technology, housed in a compact SO-8 surface-mount package with 8 pins. This device supports a maximum continuous drain current of 50 A and a maximum drain-source voltage of 20 V, making it well suited for power switching and amplification purposes in modern electronic circuits.
The proprietary TrenchFET technology provides exceptionally low on-resistance at 7.7 mOhm, ensuring minimized conduction losses and efficient power management. With a typical gate charge of 205 nC at 20 V gate-source voltage, the MOSFET enables fast switching speeds and reduced switching losses, important for high-frequency switching applications.
Designed for operation in demanding environments, the device withstands a wide thermal range from -55°C minimum to 150°C maximum operating temperature. It dissipates up to 39 W of power safely when adequately cooled. The maximum gate-source voltage ratings of -12 V to +12 V offer robust gate control tolerances.
The SO-8 package dimensions are 6.25 mm length, 5.26 mm width, and 1.12 mm height, optimized for compact PCB layouts and surface mounting techniques. This MOSFET is ideal for use in industrial electronics, power management, automotive electronics (non-automotive standard compliant), telecommunications, and consumer electronics requiring a reliable, efficient P-Channel power switch.
Maximum continuous drain current of 50 A. Maximum drain-source voltage of 20 V. Low on-resistance of 7.7 mOhm with TrenchFET Gen III technology. SO-8 surface mount package with 8 pins. Typical gate charge of 205 nC for fast switching.
Wide temperature range from -55°C to 150°C. Maximum power dissipation of 39 W. Maximum gate-source voltage ±12 V. Forward voltage of -1.1 V supports device efficiency. Compact package dimensions of 6.25 × 5.26 × 1.12 mm.
This Vishay TrenchFET Type P-Channel MOSFET is suitable for a wide range of demanding industrial, laboratory, commercial electronics, telecommunications, and power electronics applications. Browse our semiconductor offerings to find compatible components and related parts for your project requirements.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 50 A.
This MOSFET supports a maximum drain-source voltage of 20 V.
It features a low on-resistance of 7.7 mΩ, which helps minimize conduction losses.
The typical gate charge at a gate-source voltage of 20 V is 205 nC.
The SO-8 package dimensions are 6.25 mm in length, 5.26 mm in width, and 1.12 mm in height.
It operates within a temperature range of -55°C to 150°C.
The maximum power dissipation for this MOSFET is 39 W.
The maximum gate-source voltage ratings are ±12 V.
This model is designed for surface mounting.
It is suitable for industrial electronics, power management, automotive electronics, telecommunications, and consumer electronics.
This device is a Type P channel MOSFET.
This MOSFET belongs to the TrenchFET series.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$1.11
$1.08
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent