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DiodesZetex Silicon Junction Diode, Single, 2 A, 2-Pin SMB Package, 200 V, 920 mV Forward Voltage ES2D-13-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 2.3mm
Length 3.94mm
Model ES2D-13-F
Width 3.94mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SMB
Sub Type Silicon Junction
Minimum Operating Temperature -55°C
Pin Count 2
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 50A
Maximum Forward Voltage Vf 920mV
Peak Reverse Recovery Time trr 25ns
Maximum Forward Current If 2A
Maximum Peak Reverse Repetitive Voltage Vrrm 200V

Key Features

  • This diode has a maximum forward voltage of 920 millivolts.
  • The package type is SMB suitable for surface mount technology.
  • Features a peak reverse recovery time of 25 nanoseconds for fast switching.
  • Operational temperature range spans from -55 degrees Celsius to 150 degrees Celsius.
  • Constructed with 2 pins and dimensions of 3.94 mm length, 3.94 mm width, and 2.3 mm height.
  • Supports a peak non-repetitive forward surge current of up to 50 amperes.
  • Manufactured in China and intended for industrial electronic component applications.

Product Description

DiodesZetex ES2D-13-F is a silicon junction diode designed for discrete semiconductor switching applications requiring efficient current handling and fast switching speeds. Rated for a maximum forward current of 2 amperes and a peak reverse voltage of 200 volts, this diode is optimized for surface mount PCB assemblies utilizing the SMB package format.

The diode exhibits a maximum forward voltage drop of 920 millivolts under normal operating conditions, ensuring low conduction losses. Its peak reverse recovery time of 25 nanoseconds supports rapid switching performance, beneficial for signal and power rectification circuits in electronic devices.

Physical dimensions of 3.94 mm length, 3.94 mm width, and 2.3 mm height enable compact integration in space-constrained designs. The device operates reliably over a wide temperature range from -55°C to 150°C, accommodating harsh industrial and commercial environments.

Featuring 2 pins, the diode is configured as a single silicon junction type, suitable for power and signal rectification in industrial electronics, power supplies, telecommunications, and automotive electronics (non-automotive grade).

This diode supports a peak non-repetitive forward surge current of 50 amperes for transient conditions. The SMB surface mount package offers ease of automated assembly and soldering. Manufactured to meet general quality standards without specific automotive or specialized certifications.

Its performance parameters make it suitable for use in switching diode applications within semiconductor electronic circuits. Country of origin is China. This product is listed within the Switching Diodes category of industrial semiconductor components at EnvMart, offering reliable performance for electronic industry applications.

DiodesZetex Silicon Junction Diode, Single, 2 A, 2-Pin SMB Package, 200 V, 920 mV Forward Voltage ES2D-13-F
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Frequently Asked Questions

The maximum forward current rating of this diode is 2 amperes.

The peak reverse voltage for this model is 200 volts.

The dimensions of the SMB package are 3.94 mm in length, 3.94 mm in width, and 2.3 mm in height.

The peak reverse recovery time is 25 nanoseconds, supporting fast switching performance.

The operational temperature range spans from -55 degrees Celsius to 150 degrees Celsius.

This diode has 2 pins, configured as a single silicon junction type.

The maximum forward voltage drop is 920 millivolts under normal operating conditions.

The diode supports a peak non-repetitive forward surge current of up to 50 amperes.

This model uses surface mount technology (SMT) for installation.

It is suitable for power and signal rectification in industrial electronics, power supplies, telecommunications, and automotive electronics (non-automotive grade).

This diode is manufactured in China.

The sub-type of this diode is a silicon junction diode.

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