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onsemi General Purpose NPN Transistor 600 mA, 30 V, SOT-23 Package MMBT2222LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT2222LT1G
Width 2.64mm
Mount Type Surface
Series MMBT2222L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports maximum DC collector current of 600 mA for moderate current applications.
  • Maximum collector emitter voltage rating of 30 V ensures stable operation within voltage limits.
  • Compact 3-pin SOT-23 surface mount package suitable for PCB mounting.
  • NPN transistor configuration designed for general purpose switching and amplification.
  • Maximum power dissipation of 225 mW allows efficient heat management in circuits.
  • Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments.
  • Maximum transition frequency of 100 MHz supports high frequency switching applications.
  • Minimum DC current gain (hFE) of 35 ensures adequate current amplification.

Product Description

onsemi MMBT2222LT1G is a general purpose NPN bipolar transistor rated for a maximum DC collector current of 600 mA and a collector emitter voltage of 30 V. Packaged in a compact SOT-23 3-pin surface mount format, this transistor is optimized for efficient switching and amplification in various industrial and electronic applications.

The device features a maximum power dissipation of 225 mW and can reliably operate across a broad temperature range from -55°C to 150°C, making it suitable for rugged environments and demanding conditions such as industrial control, automation, and instrumentation.

With a minimum DC current gain (hFE) of 35 and a maximum transition frequency of 100 MHz, the MMBT2222LT1G supports medium-frequency switching applications requiring fast response times. It maintains a transistor polarity of NPN and single transistor configuration ideal for both analog and digital circuitry.

The SOT-23 package’s compact dimensions (length 3.04 mm, width 2.64 mm, height 1.11 mm) enable ease of PCB layout and space-saving in miniature electronic device assemblies. The transistor’s maximum collector base voltage is 60 V dc, and maximum emitter base voltage is 5 V, suitable for standard bipolar transistor circuit requirements.

Supports maximum DC collector current of 600 mA for moderate current applications. Maximum collector emitter voltage rating of 30 V ensures stable operation within voltage limits. Compact 3-pin SOT-23 surface mount package suitable for PCB mounting.

NPN transistor configuration designed for general purpose switching and amplification. Maximum power dissipation of 225 mW allows efficient heat management in circuits. Wide operating temperature range from -55°C to 150°C ensures reliability in harsh environments.

Maximum transition frequency of 100 MHz supports high frequency switching applications. Minimum DC current gain (hFE) of 35 ensures adequate current amplification. Pin count of 3 pins compatible with standard transistor circuit layouts.

This transistor is highly applicable in industrial electronics, consumer electronics, industrial control systems, automotive electronics (non-AEC qualified variants), and other embedded system designs requiring general purpose NPN transistors.

Discover more quality semiconductor components and industrial electronic parts in the Bipolar Transistors category at EnvMart for your professional and manufacturing needs.

onsemi General Purpose NPN Transistor 600 mA, 30 V, SOT-23 Package MMBT2222LT1G
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Frequently Asked Questions

The maximum DC collector current for the MMBT2222LT1G is 600 mA, making it suitable for moderate current applications.

This model has a maximum collector-emitter voltage rating of 30 V, ensuring stable operation within voltage limits.

The MMBT2222LT1G comes in a compact SOT-23 package with dimensions of 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum power dissipation for this unit is 225 mW, allowing for efficient heat management in circuits.

It operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh environments.

The minimum DC current gain (hFE) for the MMBT2222LT1G is 35, ensuring adequate current amplification.

This model supports a maximum transition frequency of 100 MHz, which is suitable for high frequency switching applications.

The MMBT2222LT1G features a single NPN transistor configuration designed for general purpose switching and amplification.

The maximum emitter-base voltage (VEBO) for this transistor is 5 V, which is suitable for standard bipolar transistor circuit requirements.

This unit has a pin count of 3 and is designed for surface mounting, making it compatible with standard PCB layouts.

The maximum collector-base voltage (VCBO) for this transistor is 60 V DC, ensuring compatibility with various circuit designs.

The MMBT2222LT1G is applicable in industrial electronics, consumer electronics, industrial control systems, and automotive electronics among other embedded system designs.

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