STMicroelectronics N-Channel Insulated Gate Bipolar Transistor 115A 650V TO-247 Through Hole STGW75H65DFB2-4

STMicroelectronics STGW75H65DFB2-4 N-Channel Insulated Gate Bipolar Transistor (IGBT) with a maximum continuous collector current rating of 115 A and a maximum collector emitter voltage of 650 V, housed in a 4-pin TO-247 through hole package. This device incorporates an advanced trench gate field-stop structure, which significantly enhances its conduction efficiency with a typical low collector emitter saturation voltage (VCE(sat)) of 1.55 V at 75 A.

The transistor supports a maximum power dissipation of 357 W and operates reliably over a wide temperature range from -55°C to 175°C, making it suitable for industrial and commercial power electronic applications. The device integrates a very fast and soft recovery diode packaged within, reducing switching energy losses and improving the overall switching performance. This combination of features allows for efficient operation in motor drives, inverters, power supplies, and other electronic switching circuits.

The robust design, including a proprietary kelvin gate pin, minimizes tail currents and enhances switching speed to 1 MHz, enabling high-frequency applications without compromising device reliability. Its construction complies with RoHS standards, ensuring environmental safety in usage.

Physical dimensions include a length of 15.9 mm, width of 21.1 mm, and height of 5.1 mm, optimized for standard through hole mounting in discrete semiconductor applications. Maximum continuous collector current of 115 A.

Maximum collector emitter voltage of 650 V. Maximum power dissipation of 357 W. Package type: TO-247 with 4-pin through hole mount. Operating temperature range from -55°C to 175°C. Low collector emitter saturation voltage of 2 V maximum.

Optimized trench gate field-stop structure for improved conduction. RoHS compliant to meet environmental standards. Fast and soft recovery co-packaged diode for efficient switching.

This STMicroelectronics IGBT STGW75H65DFB2-4 is ideal for use in industrial power control, renewable energy technologies, automotive electronics (non-automotive standard compliant), and other high power switching applications where reliable, fast, and efficient transistor operation is critical.

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