Vishay P-Channel MOSFET, 6.5 A, 200 V Enhancement, 3-Pin TO-263 IRF9630SPBF

The Vishay IRF9630SPBF is a P-Channel MOSFET transistor designed for power switching applications requiring a continuous drain current capability of 6.5 amperes and drain-source voltage tolerance of up to 200 volts. This enhancement mode device features low on-resistance with a typical Rds(on) of 800 milliohms, which minimizes power losses and heat generation.

It is housed in a compact TO-263 surface mount package with 3 pins, allowing for efficient PCB integration. This MOSFET supports operating temperatures ranging from -55°C to 150°C, making it suitable for a wide range of industrial, automotive, and consumer electronics applications.

The device's typical gate charge of 29 nanocoulombs ensures fast switching speeds, which is ideal for high-frequency circuits. It also features a maximum power dissipation rating of 3 watts to maintain stable operation under load.

Common use cases include power management in electronic circuits, voltage regulation, motor control, and amplification in industrial and laboratory environments. The robust design and reliable electrical characteristics make the IRF9630SPBF a preferred choice in semiconductor discrete device selections.

Maximum continuous drain current of 6.5 A. Maximum drain-source voltage of 200 V. Package type: TO-263 surface mount. Low Rds(on) resistance of 800 mΩ. Wide operating temperature range from -55°C to 150°C. Explore the complete Vishay MOSFET range on EnvMart for additional semiconductor solutions.