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Nexperia Resistor-Equipped NPN Transistor, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC124XQBZ

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Model PDTC124XQBZ
Mount Type Surface
Series PDTC124X
Maximum Operating Temperature 150°C
Package Type DFN1110D-3
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 60
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 10V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 230MHz

Key Features

  • Equipped with built-in resistors to simplify circuit design.
  • Features ultra-small 3-pin DFN1110D-3 surface mount package.
  • Supports a maximum collector current of 100 mA and maximum voltage of 50 V.
  • Minimum DC current gain (hFE) of 60, enabling efficient amplification.
  • Suitable for automatic optical inspection due to low package height of 0.5 mm.
  • Compliant with RoHS and automotive standard AEC-Q101 for reliability.
  • Operates over temperature range of -55°C to 150°C, ideal for automotive and industrial use.
  • Designed for controlling IC inputs and switching digital loads.

Product Description

The Nexperia PDTC124XQBZ resistor-equipped NPN transistor is designed for efficient switching and amplification in industrial and automotive electronic applications. Featuring a compact 3-pin DFN1110D-3 (SOT8015) leadless plastic package with side-wettable flanks, this transistor supports a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 50 V.

Built-in resistors simplify circuit design and reduce the overall component count, lowering manufacturing costs and streamlining assembly processes. The ultra-low 0.5 mm package height also makes it suitable for automatic optical inspection (AOI), ensuring high-quality solder joints during production.

Key electrical parameters include a minimum DC current gain (hFE) of 60, a maximum transition frequency (ft) of 230 MHz, and voltage ratings suitable for robust switching in digital electronic circuits. The transistor is compliant with RoHS directives and meets the stringent automotive standard AEC-Q101, ensuring reliability and durability in demanding environments.

This device operates effectively across a wide temperature range from -55°C to 150°C, making it well-suited for automotive systems, industrial controls, and other harsh-environment electronic applications. Its NPN configuration is ideal for controlling integrated circuit (IC) inputs and switching loads in logic and digital circuits.

Equipped with integrated resistors to minimize external components. Compact surface mount package reduces PCB space requirements. High current and voltage ratings for versatile application use. Wide operating temperature range for automotive suitability.

Provides cost savings and assembly efficiency over traditional transistors. Complies with environmental and quality standards for industrial use.

Choose the Nexperia PDTC124XQBZ resistor-equipped transistor for a reliable, space-saving solution in modern electronics manufacturing. Explore additional Bipolar Transistors and semiconductor devices within the EnvMart catalog for complementary components designed to meet diverse industrial needs.

Nexperia Resistor-Equipped NPN Transistor, 100 mA, 50 V, 3-Pin DFN1110D-3 PDTC124XQBZ
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Frequently Asked Questions

The maximum DC collector current for this model is 100 mA.

It has a maximum collector-emitter voltage rating of 50 V.

This model comes in a DFN1110D-3 surface mount package.

The minimum DC current gain (hFE) is 60.

It operates over a temperature range from -55°C to 150°C.

Yes, it complies with the automotive standard AEC-Q101.

The maximum emitter-base voltage (VEBO) is 10 V, and the maximum collector-base voltage (VCBO) is 50 V.

The PDTC124XQBZ has a pin count of 3.

It is equipped with built-in resistors that simplify circuit design and reduce the overall component count.

The maximum transition frequency (ft) is 230 MHz.

The country of origin for this transistor is India.

It is suitable for controlling IC inputs and switching digital loads in automotive and industrial electronic applications.

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