DiodesZetex P-Channel MOSFET PowerDI3333 Package, 17.5 A Continuous Drain Current, 20 V Max Drain Source Voltage DMP2006UFG-7

DiodesZetex DMP2006UFG-7 is a high-performance P-Channel MOSFET designed for electronic applications requiring efficient power switching and amplification. Featuring an 8-pin PowerDI3333 surface mount package, this MOSFET provides a maximum continuous drain current of 17.5 A and a maximum drain source voltage of 20 V, suitable for a range of power management tasks in consumer electronics, industrial control systems, and automotive electronics.

With a robust power dissipation of 41 W, the device ensures stable operation across temperatures ranging from -55°C to 150°C, supporting demanding environments. The MOSFET’s enhancement mode channel provides a low forward voltage drop of approximately -1.2 V and a typical gate charge of 140 nC at Vgs, contributing to faster switching and lower switching losses.

This device includes features like low gate-source voltage limits (±10 V) to protect against voltage spikes during operation, and its compact dimensions (3.35 mm length and width, 0.8 mm height) ensure easy integration on high-density printed circuit boards (PCBs).

The DMP2006UFG-7 meets stringent automotive standard AEC-Q101, highlighting its reliability for automotive electronics applications. Common industrial sectors for this MOSFET include electronics manufacturing, automotive systems, power controllers, and embedded system design.

Designed for surface mount with an 8-pin PowerDI3333 package. Supports maximum continuous drain current of 17.5 amperes. Operates with maximum drain source voltage of 20 volts. Maximum power dissipation rating is 41 watts ensuring efficient thermal management.

Operating temperature range from -55°C to 150°C for reliable performance. Typical gate charge of 140 nC at gate-source voltage improves switching efficiency. Low typical drain-source on resistance at 17 milliohms reduces conduction losses.

Meets Automotive Standard AEC-Q101 certification requirements. Compact device dimensions: length and width both 3.35 mm, height 0.8 mm. Gate source voltage limits ±10 V ensuring device safety under drive conditions.

For engineers and designers seeking reliable discrete semiconductor components for power management, the DiodesZetex DMP2006UFG-7 provides a technically robust solution with verified industry standards compliance. This product is ideal for incorporation into electronic assemblies requiring efficient switching MOSFET devices.

Explore our full range of MOSFETs on EnvMart for complementary solutions in semiconductor technology and advanced electronic components.