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DiodesZetex N-Channel MOSFET 60 V, 11.1 A, Enhancement Mode, 6-Pin UDFN Package DMT6016LFDF-7

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DiodesZetex N-Channel MOSFET 60 V, 11.1 A, Enhancement Mode, 6-Pin UDFN Package DMT6016LFDF-7

Name: DiodesZetex N-Channel MOSFET 60 V, 11.1 A, Enhancement Mode, 6-Pin UDFN Package DMT6016LFDF-7
Brand: DiodesZetex
SKU: 389426
Price: 0.6 USD
Availability: InStock

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Category MOSFET Brand DiodesZetex Condition New

Specifications

Country of Origin	India
Brand	DiodesZetex
Height	0.58mm
Length	2.05mm
Model	DMT6016LFDF-7
Width	2.05mm
Mount Type	Surface
Series	DMT6016LFDF
Maximum Operating Temperature	150°C
Package Type	UDFN
Minimum Operating Temperature	-55°C
Pin Count	6
Automotive Standard	AEC-Q101, AEC-Q100, AEC-Q200
Channel Type	N
Maximum Continuous Drain Current Id	11.1A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	27mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.9W
Typical Gate Charge Qg @ Vgs	17nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	0.7V

Key Features

The device operates in enhancement mode ensuring reliable switching performance.
Maximum power dissipation is rated at 1.9 W for safe thermal operation.
Maximum drain-source resistance is low at 27 milliohms, enhancing efficiency.
Designed for surface mount with a compact 2.05 mm by 2.05 mm footprint and 0.58 mm height.
Typical gate charge is 17 nC at Vgs, allowing for rapid switching.
Forward voltage is 0.7 V, conducive for efficient conduction.
Operating temperature range spans from -55 °C to 150 °C for durability under harsh environments.
Compliant with automotive AEC-Q101, AEC-Q100, and AEC-Q200 standards.

Product Description

DiodesZetex DMT6016LFDF-7 is a high-performance N-Channel MOSFET designed for power management and switching applications. It supports a maximum continuous drain current of 11.1 A and withstands a drain-source voltage of up to 60 V in an enhancement mode configuration.

The compact 6-pin UDFN surface mount package measures 2.05 mm in length and width, with a height of just 0.58 mm, making it suitable for densely packed electronics.

With a low maximum drain-source resistance of 27 milliohms, this MOSFET ensures minimal conduction losses and higher efficiency. It dissipates up to 1.9 W of power safely at maximum operating conditions.

Gate charge is optimized at 17 nC, which facilitates fast switching and reduces power consumption in gate drive circuitry. The device's forward voltage of 0.7 V further complements efficient signal conduction.

The MOSFET operates reliably over a wide temperature range from -55 °C to 150 °C, making it ideal for industrial, automotive, and commercial electronics applications where thermal stability is critical.

The device meets key automotive qualifications including AEC-Q101, AEC-Q100, and AEC-Q200 standards. Its compact package type and surface mount design enable integration into modern PCB assemblies with space constraints.

Typical applications include power conversion, motor control, and general switching in electronic systems. Engineers can leverage the low gate charge and resistance characteristics to optimize power efficiency in designs.

This N-Channel MOSFET from DiodesZetex balances high current capability with low voltage operation and robust thermal characteristics, making it a versatile and reliable semiconductor component for advanced electronics.

Explore EnvMart’s Electronics & Electricals category for more discrete semiconductor components including MOSFETs suited for various industrial and automotive applications.