DiodesZetex N-Channel MOSFET, 9.4 A Drain Current, 20 V Drain Source Voltage, Enhancement Mode, 6-Pin UDFN DMN2022UFDF-7

DiodesZetex DMN2022UFDF-7 is an N-channel MOSFET device designed for industrial and electronic applications requiring precise and efficient switching operations. Offering a maximum continuous drain current of 9.4 amperes and a drain-source voltage of 20 volts, this transistor optimizes power management in surface-mount PCB layouts.

The device's enhancement mode operation ensures effective gate control with a rated gate-source voltage between -8 and +8 volts. It features a typical gate charge of 18 nanocoulombs which supports fast switching speeds essential for high-frequency electronics.

Rated for operation within a broad temperature range from -55°C up to 150°C, this MOSFET meets stringent industry requirements including automotive standards AEC-Q100, AEC-Q200, and AEC-Q101, assuring durability and performance in demanding environments.

Its low maximum drain-source resistance of 50 milliohms reduces conduction losses, improving efficiency in power applications. The compact 6-pin UDFN package with dimensions of 2.05 mm by 2.05 mm by 0.58 mm facilitates integration in size-constrained circuit boards typical in automotive, industrial, and consumer electronic products.

This component is mainly used in switching power supplies, motor controllers, battery management systems, and other electronic circuits where high reliability and performance are required. The surface mount package complements modern automated assembly processes for volume manufacturing.

Supports a maximum power dissipation of 2.03 W under normal conditions. Packaged in a compact 6-pin UDFN form factor suitable for space-constrained circuits. Features an enhancement mode channel for efficient control. Operates reliably across a wide temperature range from -55°C to 150°C.

Exhibits a low maximum drain-source resistance of 50 milliohms to minimize losses. Typical gate charge of 18 nanocoulombs at gate-source voltage for fast switching performance. Rated gate-source voltage is -8 V to +8 V enabling robust gate control.

Compliant with automotive standards AEC-Q100, AEC-Q200, and AEC-Q101 for high reliability. Dimensions measure approximately 2.05 mm length, 2.05 mm width, and 0.58 mm height for compact PCB integration.

This DiodesZetex MOSFET is ideal for applications in industrial controls, automotive electronics, consumer devices, and power management circuits. Its compliance with automotive quality standards ensures suitability for demanding automotive and industrial environments.

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